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	Electronic band structures and electron spins of inas/gaas quantum dots induced by wetting-layer fluctuation
	Ning, J. Q.1,2; Xu, S. J.1,2; Ruan, X. Z.3; Ji, Yang3; Zheng, H. Z.3; Sheng, W. D.4; Liu, H. C.5,6
刊名	Journal of applied physics
	2011-09-01
卷号	110期号:5页码:5
ISSN号	0021-8979
DOI	10.1063/1.3633508
通讯作者	Ning, j. q.()
英文摘要	Electronic band structures and spin states of the inas/gaas quantum dots (qds) induced by the wetting-layer fluctuation were investigated by employing the technique of time-resolved kerr rotation (trkr) with and without magnetic field. sign change of the kerr rotation signal was unambiguously observed when only the wavelength of the pump/probe light was scanned. by carefully examining the dependence of trkr signal on the excitation wavelength and magnetic field as well as photoluminescence and reflectance spectra, the physical origin causing the sign change of the kerr signal is uncovered. it is due to the resonant excitations of electrons with opposite spin orientations at heavy-(hh) and light-hole (lh) subbands, respectively, since there is a large enough energy separation in qds for the excitation laser pulses. this measurement also leads to a precise determination of the energy separation between the hh and lh subbands near k = 0 point in the dots. (c) 2011 american institute of physics. [doi:10.1063/1.3633508]
WOS关键词	WELLS ; RELAXATION ; HOLE ; PHOTOLUMINESCENCE ; SEMICONDUCTORS ; LOCALIZATION ; TRANSITIONS ; EXCITONS ; CARRIERS ; GROWTH
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000294968600131
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428136
专题	半导体研究所
通讯作者	Ning, J. Q.
作者单位	1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Univ Hong Kong, HKU CAS Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China 4.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China 5.Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200240, Peoples R China 6.Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
推荐引用方式 GB/T 7714	Ning, J. Q.,Xu, S. J.,Ruan, X. Z.,et al. Electronic band structures and electron spins of inas/gaas quantum dots induced by wetting-layer fluctuation[J]. Journal of applied physics,2011,110(5):5.
APA	Ning, J. Q..,Xu, S. J..,Ruan, X. Z..,Ji, Yang.,Zheng, H. Z..,...&Liu, H. C..(2011).Electronic band structures and electron spins of inas/gaas quantum dots induced by wetting-layer fluctuation.Journal of applied physics,110(5),5.
MLA	Ning, J. Q.,et al."Electronic band structures and electron spins of inas/gaas quantum dots induced by wetting-layer fluctuation".Journal of applied physics 110.5(2011):5.

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