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	Strain-induced anticrossing of bright exciton levels in single self-assembled gaas/alxga1-xas and inxga1-xas/gaas quantum dots
	Plumhof, J. D.1; Krapek, V.2; Ding, F.1,3; Joens, K. D.4; Hafenbrak, R.4; Klenovsky, P.2; Herklotz, A.5; Doerr, K.5; Michler, P.4; Rastelli, A.1
刊名	Physical review b
	2011-03-09
卷号	83期号:12页码:4
ISSN号	1098-0121
DOI	10.1103/physrevb.83.121302
通讯作者	Plumhof, j. d.(j.d.plumhof@ifw-dresden.de)
英文摘要	We study the effect of elastic anisotropic biaxial strain, induced by a piezoelectric actuator, on the light emitted by neutral excitons confined in different kinds of epitaxial quantum dots. we find that the light polarization rotates by up to similar to 80 degrees and the fine structure splitting (fss) varies nonmonotonically by several tens of mu ev as the strain is varied. these findings provide the experimental proof of a recently predicted strain-induced anticrossing of the bright states of neutral excitons in quantum dots. calculations on model dots qualitatively reproduce the observations and suggest that the minimum reachable fss critically depends on the orientation of the strain axis relative to the dot elongation.
WOS关键词	ENTANGLED PHOTON PAIRS ; SEMICONDUCTOR ; SPIN
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	AMER PHYSICAL SOC
WOS记录号	WOS:000288160300001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428104
专题	半导体研究所
通讯作者	Plumhof, J. D.
作者单位	1.IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany 2.Masaryk Univ, Inst Condensed Matter Phys, CZ-61137 Brno, Czech Republic 3.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 4.Univ Stuttgart, Inst Halbleiteropt & Funkt Grenzflachen, D-70569 Stuttgart, Germany 5.IFW Dresden, Inst Metall Mat, D-01069 Dresden, Germany
推荐引用方式 GB/T 7714	Plumhof, J. D.,Krapek, V.,Ding, F.,et al. Strain-induced anticrossing of bright exciton levels in single self-assembled gaas/alxga1-xas and inxga1-xas/gaas quantum dots[J]. Physical review b,2011,83(12):4.
APA	Plumhof, J. D..,Krapek, V..,Ding, F..,Joens, K. D..,Hafenbrak, R..,...&Schmidt, O. G..(2011).Strain-induced anticrossing of bright exciton levels in single self-assembled gaas/alxga1-xas and inxga1-xas/gaas quantum dots.Physical review b,83(12),4.
MLA	Plumhof, J. D.,et al."Strain-induced anticrossing of bright exciton levels in single self-assembled gaas/alxga1-xas and inxga1-xas/gaas quantum dots".Physical review b 83.12(2011):4.

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