| High characteristic temperature ingaasp/inp tunnel injection multiple-quantum-well lasers | |
| Wang Yang; Qiu Ying-Ping; Pan Jiao-Qing; Zhao Ling-Juan; Zhu Hong-Liang; Wang Wei | |
| 刊名 | Chinese physics letters
 |
| 2010-11-01 | |
| 卷号 | 27期号:11页码:3 |
| ISSN号 | 0256-307X |
| DOI | 10.1088/0256-307x/27/11/114201 |
| 通讯作者 | Wang yang(wangyang06@semi.ac.cn) |
| 英文摘要 | We fabricate 1.5 mu m ingaasp/inp tunnel injection multiple-quantum-well (ti-mqw) fabry-perot (f-p) ridge lasers. the laser heterostructures, including an inner cladding layer and an inp tunnel barrier layer, are grown by metal-organic chemical-vapor deposition (mocvd). characteristic temperature.. 0 of 160k at 20 degrees c is obtained for 500-mu m-long lasers. t(0) is measured as high as 88k in the temperature range of 15-75 degrees c. cavity length dependence of t(0) is investigated. |
| WOS关键词 | AUGER RECOMBINATION ; THRESHOLD CURRENT ; DEPENDENCE ; DEVICE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000283725100022 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2428099 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang Yang |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Yang,Qiu Ying-Ping,Pan Jiao-Qing,et al. High characteristic temperature ingaasp/inp tunnel injection multiple-quantum-well lasers[J]. Chinese physics letters,2010,27(11):3. |
| APA | Wang Yang,Qiu Ying-Ping,Pan Jiao-Qing,Zhao Ling-Juan,Zhu Hong-Liang,&Wang Wei.(2010).High characteristic temperature ingaasp/inp tunnel injection multiple-quantum-well lasers.Chinese physics letters,27(11),3. |
| MLA | Wang Yang,et al."High characteristic temperature ingaasp/inp tunnel injection multiple-quantum-well lasers".Chinese physics letters 27.11(2010):3. |
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