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	Microphotoluminescence investigation of inas quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure
	Ding, Y.1; Fan, W. J.1; Ma, B. S.1; Xu, D. W.1; Yoon, S. F.1; Liang, S.2; Zhao, L. J.2; Wasiak, M.3; Czyszanowski, T.3; Nakwaski, W.3
刊名	Journal of applied physics
	2010-10-01
卷号	108期号:7页码:5
ISSN号	0021-8979
DOI	10.1063/1.3490236
通讯作者	Ding, y.(yding@ntu.edu.sg)
英文摘要	Microphotoluminescence (mu-pl) investigation has been performed at room temperature on inas quantum dot (qd) vertical cavity surface emitting laser (vcsel) structure in order to characterize the qd epitaxial structure which was designed for 1.3 mu m wave band emission. actual and precise qd emission spectra including distinct ground state (gs) and excited state (es) transition peaks are obtained by an edge-excitation and edge-emission (eeee) mu-pl configuration. conventional photoluminescence methods for qd-vcsels structure analysis are compared and discussed, which indicate the eeee mu-pl is a useful tool to determine the optical features of the qd active region in an as-grown vcsel structure. some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. after adjustment of epitaxial growth according to eeee mu-pl measurement results, qd-vcsel structure wafer with qd gs transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained. (c) 2010 american institute of physics. [doi:10.1063/1.3490236]
WOS关键词	VAPOR-PHASE EPITAXY ; PHOTOVOLTAGE SPECTROSCOPY ; PHOTOLUMINESCENCE ; MODES
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000283222200012
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428082
专题	半导体研究所
通讯作者	Ding, Y.
作者单位	1.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Tech Univ Lodz, Inst Phys, PL-90924 Lodz, Poland
推荐引用方式 GB/T 7714	Ding, Y.,Fan, W. J.,Ma, B. S.,et al. Microphotoluminescence investigation of inas quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure[J]. Journal of applied physics,2010,108(7):5.
APA	Ding, Y..,Fan, W. J..,Ma, B. S..,Xu, D. W..,Yoon, S. F..,...&Nakwaski, W..(2010).Microphotoluminescence investigation of inas quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure.Journal of applied physics,108(7),5.
MLA	Ding, Y.,et al."Microphotoluminescence investigation of inas quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure".Journal of applied physics 108.7(2010):5.

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