Pseudo-rhombus-shaped subwavelength crossed gratings of gaas for broadband antireflection | |
Chen Xi1; Fan Zhong-Chao2; Zhang Jing1; Song Guo-Feng1; Chen Liang-Hui1 | |
刊名 | Chinese physics letters |
2010-12-01 | |
卷号 | 27期号:12页码:3 |
ISSN号 | 0256-307X |
DOI | 10.1088/0256-307x/27/12/124210 |
通讯作者 | Chen xi(chenxi@semi.ac.cn) |
英文摘要 | Holographic lithography coupled with the nonlinear response of photoresist to the exposure is adopted to fabricate porous photoresist (pr) mask. conventional dot pr mask is also generated, and both patterns are transferred into a underlying gaas substrate by the optimal dry etching process to obtain tapered subwavelength crossed gratings (swcgs) to mimic the moth-eye structure. in comparison of the experiment and simulation, the closely-packed pseudo-rhombus-shaped gaas swcgs resulting from the porous mask outperforms the conical counterpart which comes from the dot mask, and achieves a reported lowest mean spectral reflectance of 1.1%. |
WOS关键词 | SILICON ; REFLECTION ; ABSORPTION ; LIGHT |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
出版者 | IOP PUBLISHING LTD |
WOS记录号 | WOS:000285390300028 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428053 |
专题 | 半导体研究所 |
通讯作者 | Chen Xi |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Chen Xi,Fan Zhong-Chao,Zhang Jing,et al. Pseudo-rhombus-shaped subwavelength crossed gratings of gaas for broadband antireflection[J]. Chinese physics letters,2010,27(12):3. |
APA | Chen Xi,Fan Zhong-Chao,Zhang Jing,Song Guo-Feng,&Chen Liang-Hui.(2010).Pseudo-rhombus-shaped subwavelength crossed gratings of gaas for broadband antireflection.Chinese physics letters,27(12),3. |
MLA | Chen Xi,et al."Pseudo-rhombus-shaped subwavelength crossed gratings of gaas for broadband antireflection".Chinese physics letters 27.12(2010):3. |
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