| The exciton-longitudinal-optical-phonon coupling in ingan/gan single quantum wells with various cap layer thicknesses | |
| Hu Xiao-Long1; Zhang Jiang-Yong1,2; Shang Jing-Zhi3; Liu Wen-Jie1; Zhang Bao-Ping1,4 | |
| 刊名 | Chinese physics b
 |
| 2010-11-01 | |
| 卷号 | 19期号:11页码:5 |
| 关键词 | Exciton-longitudinal-optical-phonon Ingan/gan single quantum well Gan cap layer Huang-rhys factor |
| ISSN号 | 1674-1056 |
| 通讯作者 | Zhang bao-ping() |
| 英文摘要 | This paper studies the exciton-longitudinal-optical-phonon coupling in ingan/gan single quantum wells with various cap layer thicknesses by low temperature photoluminescence (pl) measurements with increasing cap layer thickness, the pl peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (lo) phonon, described by huang-rhys factor, increases remarkably due to an enhancement of the internal electric field with increasing excitation intensity, the zero-phonon peak shows a blueshift and the huang-rhys factor decreases these results reveal that there is a large built-in electric field in the well layer and the exciton-lo phonon coupling is strongly affected by the thickness of the cap layer |
| WOS关键词 | DEPENDENCE ; EMISSION ; DIODES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000284973100105 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2427955 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang Bao-Ping |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Lab Micronano Optoelect, Xiamen 361005, Peoples R China 2.Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China 3.Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore 4.Xiamen Univ, Pen Tung Sah Micronano Technol Res Ctr, Xiamen 361005, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu Xiao-Long,Zhang Jiang-Yong,Shang Jing-Zhi,et al. The exciton-longitudinal-optical-phonon coupling in ingan/gan single quantum wells with various cap layer thicknesses[J]. Chinese physics b,2010,19(11):5. |
| APA | Hu Xiao-Long,Zhang Jiang-Yong,Shang Jing-Zhi,Liu Wen-Jie,&Zhang Bao-Ping.(2010).The exciton-longitudinal-optical-phonon coupling in ingan/gan single quantum wells with various cap layer thicknesses.Chinese physics b,19(11),5. |
| MLA | Hu Xiao-Long,et al."The exciton-longitudinal-optical-phonon coupling in ingan/gan single quantum wells with various cap layer thicknesses".Chinese physics b 19.11(2010):5. |
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