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	Metamorphic ingaas p-i-n photodetectors with 1.75 mu m cut-off wavelength grown on gaas
	Zhu Bin1; Han Qin1; Yang Xiao-Hong1; Ni Hai-Qiao2; He Ji-Fang2; Niu Zhi-Chuan2; Wang Xin1; Wang Xiu-Ping1; Wang Jie1
刊名	Chinese physics letters
	2010-03-01
卷号	27期号:3页码:4
ISSN号	0256-307X
DOI	10.1088/0256-307x/27/3/038504
通讯作者	Zhu bin(zhubin@semi.ac.cn)
英文摘要	Top-illuminated metamorphic ingaas p-i-n photodetectors (pds) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on gaas substrates. the pds are grown by a solid-source molecular beam epitaxy system. the large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual inp substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. the dark current densities are typically 5 x 10(-6) a/cm(2) at 0 v bias and 2.24 x 10(-4) a/cm(2) at a reverse bias of 5 v. at a wavelength of 1.55 mu m, the pds have an optical responsivity of 0.48 a/w, a linear photoresponse up to 5 mw optical power at -4 v bias. the measured -3 db bandwidth of a 32 mu m diameter device is 7 ghz. this work proves that ingaas buffer layers grown by solid source mbe are promising candidates for gaas-based long wavelength devices.
WOS关键词	MOLECULAR-BEAM EPITAXY ; BUFFER LAYERS ; DARK CURRENT ; PHOTODIODES ; LASERS
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000275376200084
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427951
专题	半导体研究所
通讯作者	Zhu Bin
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhu Bin,Han Qin,Yang Xiao-Hong,et al. Metamorphic ingaas p-i-n photodetectors with 1.75 mu m cut-off wavelength grown on gaas[J]. Chinese physics letters,2010,27(3):4.
APA	Zhu Bin.,Han Qin.,Yang Xiao-Hong.,Ni Hai-Qiao.,He Ji-Fang.,...&Wang Jie.(2010).Metamorphic ingaas p-i-n photodetectors with 1.75 mu m cut-off wavelength grown on gaas.Chinese physics letters,27(3),4.
MLA	Zhu Bin,et al."Metamorphic ingaas p-i-n photodetectors with 1.75 mu m cut-off wavelength grown on gaas".Chinese physics letters 27.3(2010):4.

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