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	Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in inn films
	Liu, B.1; Zhang, Z.1; Zhang, R.1; Fu, D. Y.1; Xie, Z. L.1; Lu, H.1; Schaff, W. J.3; Song, L. H.1; Cui, Y. C.1; Hua, X. M.1
刊名	Applied physics a-materials science & processing
	2010-04-01
卷号	99期号:1页码:139-143
ISSN号	0947-8396
DOI	10.1007/s00339-010-5594-3
通讯作者	Zhang, r.(rzhang@nju.edu.cn)
英文摘要	Inn films with electron concentration ranging from n similar to 10(17) to 10(20) cm(-3) grown by metal-organic chemical vapor deposition (mocvd) and molecular beam epitaxy (mbe) were investigated by variable-temperature photoluminescence and absorption measurements. the energy positions of absorption edge as well as photoluminescence peak of these inn samples with electron concentration above 10(18) cm(-3) show a distinct s-shape temperature dependence. with a model of potential fluctuations caused by electron-impurity interactions, the behavior can be quantitatively explained in terms of exciton freeze-out in local potential minima at sufficiently low temperatures, followed by thermal redistribution of the localized excitons when the band gap shrinks with increasing temperature. the exciton localization energy sigma (loc) is found to follow the n (5/12) power relation, which testifies to the observed strong localization effects in inn with high electron concentrations.
WOS关键词	BAND-GAP ; TEMPERATURE-DEPENDENCE ; ENERGY ; SEMICONDUCTORS ; SPECTRA ; EPITAXY ; GROWTH ; LAYERS
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	SPRINGER
WOS记录号	WOS:000276069900020
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427948
专题	半导体研究所
通讯作者	Zhang, R.
作者单位	1.Nanjing Univ, Dept Phys, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing Natl Lab Microstruct, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
推荐引用方式 GB/T 7714	Liu, B.,Zhang, Z.,Zhang, R.,et al. Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in inn films[J]. Applied physics a-materials science & processing,2010,99(1):139-143.
APA	Liu, B..,Zhang, Z..,Zhang, R..,Fu, D. Y..,Xie, Z. L..,...&Wang, Z. G..(2010).Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in inn films.Applied physics a-materials science & processing,99(1),139-143.
MLA	Liu, B.,et al."Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in inn films".Applied physics a-materials science & processing 99.1(2010):139-143.

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