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	Multi-wafer 3c-sic heteroepitaxial growth on si(100) substrates
	Sun Guo-Sheng1,2; Liu Xing-Fang1,2; Wang Lei2; Zhao Wan-Shun2; Yang Ting2; Wu Hai-Lei2; Yan Guo-Guo2; Zhao Yong-Mei3; Ning Jin3; Zeng Yi-Ping1,2
刊名	Chinese physics b
	2010-08-01
卷号	19期号:8页码:5
关键词	3c-sic Heteroepitaxial Multi-wafer Uniformity
ISSN号	1674-1056
通讯作者	Sun guo-sheng(gshsun@red.semi.ac.cn)
英文摘要	Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. here we report on results of the heteroepitaxial growth of multi-wafer 3c-sic films on si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (hwlpcvd) system which was designed to be have a high-throughput, multi-wafer (3x2-inch) capacity. 3c-sic film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. the undoped and the moderate nh(3) doped n-type 3c-sic films with specular surface are grown in the hwlpcvd, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3c-sic films are obtained to be 6%similar to 7% and 6.7%similar to 8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.
WOS关键词	SILICON-CARBIDE ; FILMS ; SI ; DEPOSITION ; DEVICES ; WAFERS ; MEMS
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000280741800091
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427928
专题	半导体研究所
通讯作者	Sun Guo-Sheng
作者单位	1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, State Key Lab Transducer Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Sun Guo-Sheng,Liu Xing-Fang,Wang Lei,et al. Multi-wafer 3c-sic heteroepitaxial growth on si(100) substrates[J]. Chinese physics b,2010,19(8):5.
APA	Sun Guo-Sheng.,Liu Xing-Fang.,Wang Lei.,Zhao Wan-Shun.,Yang Ting.,...&Li Jin-Min.(2010).Multi-wafer 3c-sic heteroepitaxial growth on si(100) substrates.Chinese physics b,19(8),5.
MLA	Sun Guo-Sheng,et al."Multi-wafer 3c-sic heteroepitaxial growth on si(100) substrates".Chinese physics b 19.8(2010):5.

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