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	Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- sio2/si p-channel metal-oxide-semiconductor stacks
	Zheng, X. H.1; Huang, A. P.1; Xiao, Z. S.1; Yang, Z. C.1; Wang, M.1; Zhang, X. W.2; Wang, W. W.3; Chu, Paul K.4
刊名	Applied physics letters
	2010-09-27
卷号	97期号:13页码:3
ISSN号	0003-6951
DOI	10.1063/1.3491292
通讯作者	Huang, a. p.(aphuang@buaa.edu.cn)
英文摘要	The origin of the flat band voltage roll-off (v-fb roll-off) in metal gate/high-k/ultrathin-sio2/si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the sio2/si interface on the v-fb sharp roll-off is proposed. the v-fb sharp roll-off appears when the thickness of the sio2 interlayer diminishes to below the oxygen diffusion depth. the results derived using our model agree well with experimental data and provide insights to the mechanism of the v-fb sharp roll-off. (c) 2010 american institute of physics. [doi: 10.1063/1.3491292]
WOS关键词	OXYGEN ; GATE ; DIFFUSION ; FILMS
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000282443800056
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427884
专题	半导体研究所
通讯作者	Huang, A. P.
作者单位	1.Beihang Univ, Dept Phys, Beijing 100191, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr, Beijing 100029, Peoples R China 4.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Zheng, X. H.,Huang, A. P.,Xiao, Z. S.,et al. Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- sio2/si p-channel metal-oxide-semiconductor stacks[J]. Applied physics letters,2010,97(13):3.
APA	Zheng, X. H..,Huang, A. P..,Xiao, Z. S..,Yang, Z. C..,Wang, M..,...&Chu, Paul K..(2010).Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- sio2/si p-channel metal-oxide-semiconductor stacks.Applied physics letters,97(13),3.
MLA	Zheng, X. H.,et al."Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- sio2/si p-channel metal-oxide-semiconductor stacks".Applied physics letters 97.13(2010):3.

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