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	Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating
	Cao, Yu-Lian2; Yang, Tao1; Xu, Peng-Fei1; Ji, Hai-Ming1; Gu, Yong-Xian1; Wang, Xiao-Dong3; Wang, Qing2; Ma, Wen-Quan2; Chen, Liang-Hui2
刊名	Applied physics letters
	2010-04-26
卷号	96期号:17页码:3
关键词	Excited states Gallium arsenide Iii-v semiconductors Indium compounds Laser tuning Optical films Quantum dot lasers Silicon compounds Tantalum compounds
ISSN号	0003-6951
DOI	10.1063/1.3418647
通讯作者	Yang, tao(tyang@semi.ac.cn)
英文摘要	In this letter, we present a facet coating design to delay the excited state (es) lasing for 1310 nm inas/gaas quantum dot lasers. the key point of our design is to ensure that the mirror loss of es is larger than that of the ground state by decreasing the reflectivity of the es. in the facet coating design, the central wavelength is at 1480 nm, and the high- and low-index materials are ta(2)o(5) and sio(2), respectively. compared with the traditional si/sio(2) facet coating with a central wavelength of 1310 nm, we have found that with the optimal design the turning temperature of the es lasing has been delayed from 90 to 100 degrees c for the laser diodes with cavity length of 1.2 mm. furthermore, the characteristic temperature (t(0)) of the laser diodes is also improved.
WOS关键词	TEMPERATURE-DEPENDENCE ; THRESHOLD ; PERFORMANCE ; GAIN
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000277242000001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427882
专题	半导体研究所
通讯作者	Yang, Tao
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Cao, Yu-Lian,Yang, Tao,Xu, Peng-Fei,et al. Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating[J]. Applied physics letters,2010,96(17):3.
APA	Cao, Yu-Lian.,Yang, Tao.,Xu, Peng-Fei.,Ji, Hai-Ming.,Gu, Yong-Xian.,...&Chen, Liang-Hui.(2010).Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating.Applied physics letters,96(17),3.
MLA	Cao, Yu-Lian,et al."Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating".Applied physics letters 96.17(2010):3.

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