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	Electrical and optical phase transition properties of nano vanadium dioxide thin films
	Liang Ji-ran1,4; Hu Ming1; Wang Xiao-dong2; Li Gui-ke3; Kan Qiang4; Ji An2; Yang Fu-hua2; Liu Jian3; Wu Nan-jian3; Chen Hong-da4
刊名	Spectroscopy and spectral analysis
	2010-04-01
卷号	30期号:4页码:1002-1007
关键词	Nano vo(2) thin films Optical phase transition Electrical phase transition
ISSN号	1000-0593
DOI	10.3964/j.issn.1000-0593(2010)04-1002-06
通讯作者	Liang ji-ran(liang_jiran@tju.edu.cn)
英文摘要	Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. the nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. four point probe method and fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. the results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. the nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees c, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees c; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. the semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. the phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. the phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.
WOS关键词	VO2 ; TEMPERATURE ; FABRICATION
WOS研究方向	Spectroscopy
WOS类目	Spectroscopy
语种	英语
出版者	OFFICE SPECTROSCOPY & SPECTRAL ANALYSIS
WOS记录号	WOS:000276506100031
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427881
专题	半导体研究所
通讯作者	Liang Ji-ran
作者单位	1.Tianjin Univ, Coll Elect Sci & Technol, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China 2.Chinese Acad Sci, Engn Res Ctr Semicond Integrated Technol, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China 4.Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liang Ji-ran,Hu Ming,Wang Xiao-dong,et al. Electrical and optical phase transition properties of nano vanadium dioxide thin films[J]. Spectroscopy and spectral analysis,2010,30(4):1002-1007.
APA	Liang Ji-ran.,Hu Ming.,Wang Xiao-dong.,Li Gui-ke.,Kan Qiang.,...&Chen Hong-da.(2010).Electrical and optical phase transition properties of nano vanadium dioxide thin films.Spectroscopy and spectral analysis,30(4),1002-1007.
MLA	Liang Ji-ran,et al."Electrical and optical phase transition properties of nano vanadium dioxide thin films".Spectroscopy and spectral analysis 30.4(2010):1002-1007.

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