Electron tunneling through a planar single barrier in hgte quantum wells with inverted band structures | |
Zhang, L. B.1; Zhai, Feng2,3; Chang, Kai1 | |
刊名 | Physical review b
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2010-06-21 | |
卷号 | 81期号:23页码:6 |
ISSN号 | 1098-0121 |
DOI | 10.1103/physrevb.81.235323 |
通讯作者 | Zhang, l. b.() |
英文摘要 | We present a theoretical study on the electron tunneling through a single barrier created in a two-dimensional electron gas (2deg) and quantum spin hall (qsh) bar in a hgte/cdte quantum well with inverted band structures. for the 2deg, the transmission shows the fabry-perot resonances for the interband tunneling process and is blocked when the incident energy lies in the bulk gap of the barrier region. for the qsh bar, the transmission gap is reduced to the edge gap caused by the finite size effect. instead, transmission dips appear due to the interference between the edge states and the bound states originated from the bulk states. such a fano-like resonance leads to a sharp dip in the transmission which can be observed experimentally. |
WOS关键词 | INSULATOR ; SURFACE ; PHASE |
WOS研究方向 | Physics |
WOS类目 | Physics, Condensed Matter |
语种 | 英语 |
出版者 | AMER PHYSICAL SOC |
WOS记录号 | WOS:000279014800002 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2427855 |
专题 | 半导体研究所 |
通讯作者 | Zhang, L. B. |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China 3.Dalian Univ Technol, Coll Adv Sci & Technol, Dalian 116024, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, L. B.,Zhai, Feng,Chang, Kai. Electron tunneling through a planar single barrier in hgte quantum wells with inverted band structures[J]. Physical review b,2010,81(23):6. |
APA | Zhang, L. B.,Zhai, Feng,&Chang, Kai.(2010).Electron tunneling through a planar single barrier in hgte quantum wells with inverted band structures.Physical review b,81(23),6. |
MLA | Zhang, L. B.,et al."Electron tunneling through a planar single barrier in hgte quantum wells with inverted band structures".Physical review b 81.23(2010):6. |
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