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	Ferromagnetic modification of gan film by cu+ ions implantation
	Zhang, B.1; Chen, C. C.2; Yang, C.1; Wang, J. Z.1; Shi, L. Q.1; Cheng, H. S.1; Zhao, D. G.3
刊名	Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms
	2010-01-15
卷号	268期号:2页码:123-126
关键词	Nonmagnetic element doped semiconductor Cu ion implantation Gan-based dms
ISSN号	0168-583X
DOI	10.1016/j.nimb.2009.10.168
通讯作者	Zhang, b.(binzhang@fudan.edu.cn)
英文摘要	The structural and magnetic properties of cu+ ions-implanted gan films have been reported. eighty kilo-electron-volt cu+ ions were implanted into n-type gan film at room temperature with fluences ranging from 1 x 10(16) to 8 x 10(16) cm(-2) and subsequently annealed at 800 degrees c for 1 h in n-2 ambient. pixe was employed to determine the cu-implanted content. the magnetic property was measured by the quantum design mpms squid magnetometer. no secondary phases or clusters were detected within the sensitivity of xrd. raman spectrum measurement showed that the cu ions incorporated into the crystal lattice positions of gan through substitution of ga atoms. apparent ferromagnetic hysteresis loops measured at 10 k were presented. the experimental result showed that the ferromagnetic signal strongly increased with cu-implanted fluence from 1 x 10(16) to 8 x 10(16) cm(-2). (c) 2009 elsevier b.v. all rights reserved.
WOS关键词	PIXE ANALYSIS ; DOPED ZNO ; MN ; CR
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS类目	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000274610200005
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427831
专题	半导体研究所
通讯作者	Zhang, B.
作者单位	1.Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China 2.Nanjing Univ Technol, Coll Mat Sci & Engn, Nanjing 210009, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhang, B.,Chen, C. C.,Yang, C.,et al. Ferromagnetic modification of gan film by cu+ ions implantation[J]. Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,2010,268(2):123-126.
APA	Zhang, B..,Chen, C. C..,Yang, C..,Wang, J. Z..,Shi, L. Q..,...&Zhao, D. G..(2010).Ferromagnetic modification of gan film by cu+ ions implantation.Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,268(2),123-126.
MLA	Zhang, B.,et al."Ferromagnetic modification of gan film by cu+ ions implantation".Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms 268.2(2010):123-126.

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