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Tuning photoluminescence of single inas quantum dot by electric field
Chang Xiu-Ying; Dou Xiu-Ming; Sun Bao-Quan; Xiong Yong-Hua; Ni Hai-Qiao; Niu Zhi-Chuan
刊名Acta physica sinica
2010-06-01
卷号59期号:6页码:4279-4282
关键词Single inas quantum dot Stark effect Electron-hole separation
ISSN号1000-3290
通讯作者Sun bao-quan()
英文摘要By using photoluminescence (pl) and time-resolved pl spectra, the optical properties of single inas quantum dot (qd) embedded in the p-1-n structure have been studied under an applied electric field with the increasing of electric field, the exciton lifetime increases due to the stark effect. we noticed that the decrease or quenching of pl intensity with increasing the electric field is mainly due to the decrease of the carriers captured by qd.
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
出版者CHINESE PHYSICAL SOC
WOS记录号WOS:000278672300095
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2427819
专题半导体研究所
通讯作者Sun Bao-Quan
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Chang Xiu-Ying,Dou Xiu-Ming,Sun Bao-Quan,et al. Tuning photoluminescence of single inas quantum dot by electric field[J]. Acta physica sinica,2010,59(6):4279-4282.
APA Chang Xiu-Ying,Dou Xiu-Ming,Sun Bao-Quan,Xiong Yong-Hua,Ni Hai-Qiao,&Niu Zhi-Chuan.(2010).Tuning photoluminescence of single inas quantum dot by electric field.Acta physica sinica,59(6),4279-4282.
MLA Chang Xiu-Ying,et al."Tuning photoluminescence of single inas quantum dot by electric field".Acta physica sinica 59.6(2010):4279-4282.
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