| Proton irradiation-induced defects in undoped gasb studied by positron lifetime spectroscopy and photoluminescence | |
| Li, Hui1; Wang, Zhu1; Zhou, Kai1; Pang, Jingbiao1; Ke, Junyu1; Zhao, Youwen2 | |
| 刊名 | Journal of optoelectronics and advanced materials
 |
| 2009-08-01 | |
| 卷号 | 11期号:8页码:1122-1126 |
| 关键词 | Gasb Proton irradiation Defects Positron lifetime Photoluminescence |
| ISSN号 | 1454-4164 |
| 通讯作者 | Wang, zhu(wangz@whu.edu.cn) |
| 英文摘要 | Undoped gasb was irradiated by 2.6 mev protons. the irradiation-induced defects were studied by positron lifetime spectroscopy (pls) and photoluminescence (pl). positron lifetime measurements showed that vacancy-type defects were introduced after irradiation, and divacancies were formed at higher irradiation dose. annealing experiments revealed there were different annealing steps between the as grown and proton-irradiated samples, the reason for which was tentatively attributed to the formation of divacancies in the proton-irradiated samples during annealing. all the vacancy defects could be annealed out at around 500 degrees c. the pl intensity quickly fell down after proton irradiation and decreased with increasing irradiation dose, indicating that irradiation induced non-irradiative recombination centers, whose candidates were assigned to the vacancy defects induced by proton irradiation. |
| WOS关键词 | GALLIUM ANTIMONIDE ; SELF-DIFFUSION ; NATIVE DEFECTS ; SEMICONDUCTORS ; VACANCIES |
| WOS研究方向 | Materials Science ; Optics ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Optics ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | NATL INST OPTOELECTRONICS |
| WOS记录号 | WOS:000269724200013 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2427779 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Zhu |
| 作者单位 | 1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Hui,Wang, Zhu,Zhou, Kai,et al. Proton irradiation-induced defects in undoped gasb studied by positron lifetime spectroscopy and photoluminescence[J]. Journal of optoelectronics and advanced materials,2009,11(8):1122-1126. |
| APA | Li, Hui,Wang, Zhu,Zhou, Kai,Pang, Jingbiao,Ke, Junyu,&Zhao, Youwen.(2009).Proton irradiation-induced defects in undoped gasb studied by positron lifetime spectroscopy and photoluminescence.Journal of optoelectronics and advanced materials,11(8),1122-1126. |
| MLA | Li, Hui,et al."Proton irradiation-induced defects in undoped gasb studied by positron lifetime spectroscopy and photoluminescence".Journal of optoelectronics and advanced materials 11.8(2009):1122-1126. |
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