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	Characterization of thick gan films directly grown on wet-etching patterned sapphire by hvpe
	Hu Qiang1,2; Wei Tong-Bo3; Duan Rui-Fei3; Yang Jian-Kun3; Huo Zi-Qiang3; Lu Tie-Cheng1,2; Zeng Yi-Ping3
刊名	Chinese physics letters
	2009-09-01
卷号	26期号:9页码:4
ISSN号	0256-307X
通讯作者	Hu qiang()
英文摘要	Thick gan films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. the optical and structural properties of gan films are studied using scanning electronic microscopy and cathodoluminescence. test results show that initial growth of hydride vapour phase epitaxy gan occurs not only on the mesas but also on the two asymmetric sidewalls of the v-shaped grooves without selectivity. after the two-step coalescence near the interface, the gan films near the surface keep on growing along the direction perpendicular to the long sidewall. based on raman results, gan of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole gan film, and the coalescence process can release the stress. therefore, stress-free thick gan films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.
WOS关键词	VAPOR-PHASE EPITAXY ; DISLOCATIONS ; SUBSTRATE ; LAYER
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000269559000056
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427730
专题	半导体研究所
通讯作者	Hu Qiang
作者单位	1.Sichuan Univ, Minist Educ, Dept Phys, Chengdu 610064, Peoples R China 2.Sichuan Univ, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Hu Qiang,Wei Tong-Bo,Duan Rui-Fei,et al. Characterization of thick gan films directly grown on wet-etching patterned sapphire by hvpe[J]. Chinese physics letters,2009,26(9):4.
APA	Hu Qiang.,Wei Tong-Bo.,Duan Rui-Fei.,Yang Jian-Kun.,Huo Zi-Qiang.,...&Zeng Yi-Ping.(2009).Characterization of thick gan films directly grown on wet-etching patterned sapphire by hvpe.Chinese physics letters,26(9),4.
MLA	Hu Qiang,et al."Characterization of thick gan films directly grown on wet-etching patterned sapphire by hvpe".Chinese physics letters 26.9(2009):4.

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