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Photoluminescence of charged low-density inas/gaas quantum dots
Wang Hai-Li; Xiong Yong-Hua; Huang She-Song; Ni Hai-Qiao; He Zhen-Hong; Dou Xiu-Ming; Niu Zhi-Chuan
刊名Chinese physics letters
2009-10-01
卷号26期号:10页码:3
ISSN号0256-307X
通讯作者Wang hai-li()
英文摘要We obtain low-density charged inas quantum dots with an emission wavelength below 1 mu m using a low inas growth rate. the quantum dots have a bimodal size distribution with an emission wavelength of around 1340 nm and 1000 nm, respectively. we observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77 k.
WOS关键词1.3 MU-M ; SINGLE ; EMISSION
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000270303200051
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2427724
专题半导体研究所
通讯作者Wang Hai-Li
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Wang Hai-Li,Xiong Yong-Hua,Huang She-Song,et al. Photoluminescence of charged low-density inas/gaas quantum dots[J]. Chinese physics letters,2009,26(10):3.
APA Wang Hai-Li.,Xiong Yong-Hua.,Huang She-Song.,Ni Hai-Qiao.,He Zhen-Hong.,...&Niu Zhi-Chuan.(2009).Photoluminescence of charged low-density inas/gaas quantum dots.Chinese physics letters,26(10),3.
MLA Wang Hai-Li,et al."Photoluminescence of charged low-density inas/gaas quantum dots".Chinese physics letters 26.10(2009):3.
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