QQ客服 官方微博 反馈留言

	Electronic structure and optical gain saturation of inas(1-x)n(x)/gaas quantum dots
	Chen, J.1; Fan, W. J.1; Xu, Q.1; Zhang, X. W.1; Li, S. S.2; Xia, J. B.2
刊名	Journal of applied physics
	2009-06-15
卷号	105期号:12页码:10
ISSN号	0021-8979
DOI	10.1063/1.3143025
通讯作者	Chen, j.()
英文摘要	The electronic band structures and optical gains of inas1-xnx/gaas pyramid quantum dots (qds) are calculated using the ten-band k . p model and the valence force field method. the optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. with the variation of qd sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. it facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. for qd with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the fermi-dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. for larger qd, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller qd as carrier concentration increases. larger qd can reach its saturation gain faster, but this saturation gain is smaller than that of smaller qd. so the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate qd size according to the specific application requirement. (c) 2009 american institute of physics. [doi: 10.1063/1.3143025]
WOS关键词	EMISSION ; SPECTRA ; LASERS ; 8-BAND
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000267599600073
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427704
专题	半导体研究所
通讯作者	Chen, J.
作者单位	1.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 2.Chinese Acad Sci, Inst Semicond, Beijing 10083, Peoples R China
推荐引用方式 GB/T 7714	Chen, J.,Fan, W. J.,Xu, Q.,et al. Electronic structure and optical gain saturation of inas(1-x)n(x)/gaas quantum dots[J]. Journal of applied physics,2009,105(12):10.
APA	Chen, J.,Fan, W. J.,Xu, Q.,Zhang, X. W.,Li, S. S.,&Xia, J. B..(2009).Electronic structure and optical gain saturation of inas(1-x)n(x)/gaas quantum dots.Journal of applied physics,105(12),10.
MLA	Chen, J.,et al."Electronic structure and optical gain saturation of inas(1-x)n(x)/gaas quantum dots".Journal of applied physics 105.12(2009):10.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。