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	Annealing study of carrier concentration in gradient-doped gaas/gaalas epilayers grown by molecular beam epitaxy
	Zhang, Yijun1; Chang, Benkang1; Yang, Zhi1; Niu, Jun1; Xiong, Yajuan1; Shi, Feng2; Guo, Hui2; Zeng, Yiping3
刊名	Applied optics
	2009-03-20
卷号	48期号:9页码:1715-1720
ISSN号	1559-128X
DOI	10.1364/ao.48.001715
通讯作者	Chang, benkang(bkchang@mail.njust.edu.cn)
英文摘要	We measured the carrier concentration distribution of gradient-doped gaas/gqalas epilayers grown by molecular beam epitaxy before and after annealing at 600 degrees c, using electrochemical capacitance voltage profiling, to investigate the internal variation of transmission-mode gaas photocathodes arising from the annealing process. the results show that the carrier concentration increased after annealing. as a result, the total band-bending energy in the gradient-doped gaas emission layer increased by 25.24% after annealing, which improves the pbotoexcited electron movement toward the surface. on the other hand, the annealing process resulted in a worse carrier concentration discrepancy between the gaas and the gaalas, which causes a lower back interface potential barrier, decreasing the amount of high-energy photoelectrons. (c) 2009 optical society of america
WOS关键词	GAAS PHOTOCATHODES ; GALLIUM-ARSENIDE ; ALXGA1-XAS ; DIFFUSION ; SURFACE ; ENERGY
WOS研究方向	Optics
WOS类目	Optics
语种	英语
出版者	OPTICAL SOC AMER
WOS记录号	WOS:000265042000012
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427699
专题	半导体研究所
通讯作者	Chang, Benkang
作者单位	1.Nanjing Univ Sci & Technol, Inst Elect Engn & Optoelect, Nanjing 210094, Peoples R China 2.COSTIND, Xian Inst Appl Opt, Key Lab Low Light Level Technol, Xian 710065, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Yijun,Chang, Benkang,Yang, Zhi,et al. Annealing study of carrier concentration in gradient-doped gaas/gaalas epilayers grown by molecular beam epitaxy[J]. Applied optics,2009,48(9):1715-1720.
APA	Zhang, Yijun.,Chang, Benkang.,Yang, Zhi.,Niu, Jun.,Xiong, Yajuan.,...&Zeng, Yiping.(2009).Annealing study of carrier concentration in gradient-doped gaas/gaalas epilayers grown by molecular beam epitaxy.Applied optics,48(9),1715-1720.
MLA	Zhang, Yijun,et al."Annealing study of carrier concentration in gradient-doped gaas/gaalas epilayers grown by molecular beam epitaxy".Applied optics 48.9(2009):1715-1720.

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