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	Gaas-based metamorphic long-wavelength inas quantum dots grown by molecular beam epitaxy
	Wang Peng-Fei; Xiong Yong-Hua; Wang Hai-Li; Huang She-Song; Ni Hai-Qiao; Xu Ying-Qiang; He Zhen-Hong; Niu Zhi-Chuan
刊名	Chinese physics letters
	2009-06-01
卷号	26期号:6页码:4
ISSN号	0256-307X
通讯作者	Wang peng-fei(pfwang@semi.ac.cn)
英文摘要	A bilayer stacked inas/gaas quantum dot structure grown by molecular beam epitaxy on an in(0.05)ga(0.95)as metamorphic buffer is investigated. by introducing a ingaas:sb cover layer on the upper inas quantum dots (qds) layers, the emission wavelength of the qds is extended successfully to 1.533 mu m at room temperature, and the density of the qds is in the range of 4 x 10(9) -8 x 10(9) cm(-2). strong photoluminescence (pl) intensity with a full width at half maximum of 28.6 mev of the pl spectrum shows good optical quality of the bilayer qds. the growth of bilayer qds on metamorphic buffers offers a useful way to extend the wavelengths of gaas-based materials for potential applications in optoelectronic and quantum functional devices.
WOS关键词	MU-M ; LASER ; ISLANDS
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000266549300072
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427588
专题	半导体研究所
通讯作者	Wang Peng-Fei
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang Peng-Fei,Xiong Yong-Hua,Wang Hai-Li,et al. Gaas-based metamorphic long-wavelength inas quantum dots grown by molecular beam epitaxy[J]. Chinese physics letters,2009,26(6):4.
APA	Wang Peng-Fei.,Xiong Yong-Hua.,Wang Hai-Li.,Huang She-Song.,Ni Hai-Qiao.,...&Niu Zhi-Chuan.(2009).Gaas-based metamorphic long-wavelength inas quantum dots grown by molecular beam epitaxy.Chinese physics letters,26(6),4.
MLA	Wang Peng-Fei,et al."Gaas-based metamorphic long-wavelength inas quantum dots grown by molecular beam epitaxy".Chinese physics letters 26.6(2009):4.

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