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	Electroluminescence from ge on si substrate at room temperature
	Hu, Weixuan; Cheng, Buwen; Xue, Chunlai; Xue, Haiyun; Su, Shaojian; Bai, Anqi; Luo, Liping; Yu, Yude; Wang, Qiming
刊名	Applied physics letters
	2009-08-31
卷号	95期号:9页码:3
ISSN号	0003-6951
DOI	10.1063/1.3216577
通讯作者	Cheng, buwen(cbw@semi.ac.cn)
英文摘要	A ge/si heterojunction light emitting diode with a p(+)-ge/i-ge/n+-si structure was fabricated using the ultrahigh vacuum chemical vapor deposition technology on n+-si substrate. the device had a good i-v rectifying behavior. under forward bias voltage ranging from 1.1 to 2.5 v, electroluminescence around 1565 nm was observed at room temperature. the mechanism of the light emission is discussed by the radiative lifetime and the scattering rate. the results indicate that germanium is a potential candidate for silicon-based light source material. (c) 2009 american institute of physics. [doi: 10.1063/1.3216577]
WOS关键词	SEMICONDUCTORS ; DEPENDENCE ; SILICON ; GAP
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000269625800029
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427576
专题	半导体研究所
通讯作者	Cheng, Buwen
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Hu, Weixuan,Cheng, Buwen,Xue, Chunlai,et al. Electroluminescence from ge on si substrate at room temperature[J]. Applied physics letters,2009,95(9):3.
APA	Hu, Weixuan.,Cheng, Buwen.,Xue, Chunlai.,Xue, Haiyun.,Su, Shaojian.,...&Wang, Qiming.(2009).Electroluminescence from ge on si substrate at room temperature.Applied physics letters,95(9),3.
MLA	Hu, Weixuan,et al."Electroluminescence from ge on si substrate at room temperature".Applied physics letters 95.9(2009):3.

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