Growth of nb-catalysed gan nanowires | |
Zhuang, Hui-Zhao; Li, Bao-Li; Xue, Cheng-Shan; Zhang, Xiao-kai; Zhang, Shi-Ying; Wang, De-Xiao; Shen, Jia-Bing | |
刊名 | Microelectronics journal
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2008-12-01 | |
卷号 | 39期号:12页码:1629-1633 |
关键词 | Nanocrystalline materials Sputtering Semiconductors Nanostructure Nb |
ISSN号 | 0026-2692 |
DOI | 10.1016/j.mejo.2008.02.007 |
通讯作者 | Zhuang, hui-zhao(zhuanghuizhao@sdnu.edu.cn) |
英文摘要 | Gan nanowires have been successfully synthesized on si(1 1 1) substrate by ammoniating ga(2)o(3) films at 950 degrees c. the structure and morphology of gan nanowires are characterized by x-ray diffraction, scanning electron microscopy, field-emission transmission electron microscope and x-ray photoelectron spectroscopy. the results show that the synthesized nanowires are single-crystal hexagonal wurtzite gan with diameters ranging from 50 to 100 nm and lengths up to several microns. finally, the growth mechanism of gan nanowires is explored. (c) 2008 elsevier ltd. all rights reserved. |
WOS关键词 | GALLIUM NITRIDE NANOWIRES ; GA2O3 FILMS REACTION ; FABRICATION ; AMMONIA ; NH3 |
WOS研究方向 | Engineering ; Science & Technology - Other Topics |
WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology |
语种 | 英语 |
出版者 | ELSEVIER SCI LTD |
WOS记录号 | WOS:000261647800047 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2427487 |
专题 | 半导体研究所 |
通讯作者 | Zhuang, Hui-Zhao |
作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Zhuang, Hui-Zhao,Li, Bao-Li,Xue, Cheng-Shan,et al. Growth of nb-catalysed gan nanowires[J]. Microelectronics journal,2008,39(12):1629-1633. |
APA | Zhuang, Hui-Zhao.,Li, Bao-Li.,Xue, Cheng-Shan.,Zhang, Xiao-kai.,Zhang, Shi-Ying.,...&Shen, Jia-Bing.(2008).Growth of nb-catalysed gan nanowires.Microelectronics journal,39(12),1629-1633. |
MLA | Zhuang, Hui-Zhao,et al."Growth of nb-catalysed gan nanowires".Microelectronics journal 39.12(2008):1629-1633. |
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