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	Growth of nb-catalysed gan nanowires
	Zhuang, Hui-Zhao; Li, Bao-Li; Xue, Cheng-Shan; Zhang, Xiao-kai; Zhang, Shi-Ying; Wang, De-Xiao; Shen, Jia-Bing
刊名	Microelectronics journal
	2008-12-01
卷号	39期号:12页码:1629-1633
关键词	Nanocrystalline materials Sputtering Semiconductors Nanostructure Nb
ISSN号	0026-2692
DOI	10.1016/j.mejo.2008.02.007
通讯作者	Zhuang, hui-zhao(zhuanghuizhao@sdnu.edu.cn)
英文摘要	Gan nanowires have been successfully synthesized on si(1 1 1) substrate by ammoniating ga(2)o(3) films at 950 degrees c. the structure and morphology of gan nanowires are characterized by x-ray diffraction, scanning electron microscopy, field-emission transmission electron microscope and x-ray photoelectron spectroscopy. the results show that the synthesized nanowires are single-crystal hexagonal wurtzite gan with diameters ranging from 50 to 100 nm and lengths up to several microns. finally, the growth mechanism of gan nanowires is explored. (c) 2008 elsevier ltd. all rights reserved.
WOS关键词	GALLIUM NITRIDE NANOWIRES ; GA2O3 FILMS REACTION ; FABRICATION ; AMMONIA ; NH3
WOS研究方向	Engineering ; Science & Technology - Other Topics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology
语种	英语
出版者	ELSEVIER SCI LTD
WOS记录号	WOS:000261647800047
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427487
专题	半导体研究所
通讯作者	Zhuang, Hui-Zhao
作者单位	Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式 GB/T 7714	Zhuang, Hui-Zhao,Li, Bao-Li,Xue, Cheng-Shan,et al. Growth of nb-catalysed gan nanowires[J]. Microelectronics journal,2008,39(12):1629-1633.
APA	Zhuang, Hui-Zhao.,Li, Bao-Li.,Xue, Cheng-Shan.,Zhang, Xiao-kai.,Zhang, Shi-Ying.,...&Shen, Jia-Bing.(2008).Growth of nb-catalysed gan nanowires.Microelectronics journal,39(12),1629-1633.
MLA	Zhuang, Hui-Zhao,et al."Growth of nb-catalysed gan nanowires".Microelectronics journal 39.12(2008):1629-1633.

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