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	Preliminary design of a tensile-strained p-type si/sige quantum well infrared photodetector
	Jiang, Lin Gui1; Kai, Lai Hong1; Cheng, Li1; Yan, Chen Song1; Zhong, Yu Jin2
刊名	Semiconductor science and technology
	2008-03-01
卷号	23期号:3页码:5
ISSN号	0268-1242
DOI	10.1088/0268-1242/23/3/035011
通讯作者	Jiang, lin gui()
英文摘要	Considering tensile-strained p-type si/si(1-y)ge(y) quantum wells grown on a relaxed si(1-x)ge(x) ( 0 0 1) virtual substrate ( y < x), the hole subband structure and the effective masses of the first bound hole state in the quantum wells are calculated by using the 6 x 6 k center dot p method. designs for tensile-strained p-type quantum well infrared photodetectors ( qwips) based on the bound-to-quasi-bound transitions are discussed, which are expected to retain the ability of coupling normally incident infrared radiation without any grating couplers, have lower dark current than n-type qwips and also have a larger absorption coefficient and better transport characteristics than normal unstrained or compressive-strained p-type qwips.
WOS关键词	INTERSUBBAND ABSORPTION ; DARK CURRENT ; HOLE ; BAND ; DETECTOR ; SEMICONDUCTORS ; SUPERLATTICE ; PERFORMANCE ; TRANSITION
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000254385900011
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427428
专题	半导体研究所
通讯作者	Jiang, Lin Gui
作者单位	1.Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Jiang, Lin Gui,Kai, Lai Hong,Cheng, Li,et al. Preliminary design of a tensile-strained p-type si/sige quantum well infrared photodetector[J]. Semiconductor science and technology,2008,23(3):5.
APA	Jiang, Lin Gui,Kai, Lai Hong,Cheng, Li,Yan, Chen Song,&Zhong, Yu Jin.(2008).Preliminary design of a tensile-strained p-type si/sige quantum well infrared photodetector.Semiconductor science and technology,23(3),5.
MLA	Jiang, Lin Gui,et al."Preliminary design of a tensile-strained p-type si/sige quantum well infrared photodetector".Semiconductor science and technology 23.3(2008):5.

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