CORC  > 半导体研究所
Effect of nitridation on morphology, structural properties and stress of ain films
Hu Wei-Guo; Jiao Chun-Mei; Wei Hong-Yuan; Zhang Pan-Feng; Kang Ting-Ting; Zhang Ri-Qing; Liu Xiang-Lin
刊名Chinese physics letters
2008-12-01
卷号25期号:12页码:4364-4367
ISSN号0256-307X
通讯作者Hu wei-guo(sivamay@semi.ac.cn)
英文摘要We investigate effects of nitridation on ain morphology, structural properties and stress. it is found that 3 min nitridation can prominently improve ain crystal structure, and slightly smooth the surface morphology. however, 10 min nitridation degrades out-of-plane crystal structure and surface morphology instead. additionally, 3-min nitridation introduces more tensile stress (1.5 gpa) in ain films, which can be attributed to the weaker islands 2d coalescent. nitridation for 10 min can introduce more defects, or even forms polycrystallinity interlayer, which relaxes the stress. thus, the stress in ain with 10 min nitridation decreases to -0.2 gpa compressive stress.
WOS关键词TRANSMISSION ELECTRON-MICROSCOPY ; WURTZITE-TYPE CRYSTALS ; VAPOR-PHASE EPITAXY ; INTRINSIC STRESS ; SAPPHIRE SURFACE ; THIN-FILMS ; GAN ; GROWTH ; DIFFRACTION ; MECHANISM
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000261772100050
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2427406
专题半导体研究所
通讯作者Hu Wei-Guo
作者单位Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Hu Wei-Guo,Jiao Chun-Mei,Wei Hong-Yuan,et al. Effect of nitridation on morphology, structural properties and stress of ain films[J]. Chinese physics letters,2008,25(12):4364-4367.
APA Hu Wei-Guo.,Jiao Chun-Mei.,Wei Hong-Yuan.,Zhang Pan-Feng.,Kang Ting-Ting.,...&Liu Xiang-Lin.(2008).Effect of nitridation on morphology, structural properties and stress of ain films.Chinese physics letters,25(12),4364-4367.
MLA Hu Wei-Guo,et al."Effect of nitridation on morphology, structural properties and stress of ain films".Chinese physics letters 25.12(2008):4364-4367.
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