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	Comment on "use of si(+) pre-ion-implantation on si substrate to enhance the strain relaxation of the ge(x)si(1-x) metamorphic buffer layer for the growth of ge layer on si substrate" [appl. phys. lett. 90, 083507 (2007)]
	Zhou, Zhiwen1; Li, Cheng1; Chen, Songyan1; Lai, Hongkai1; Yu, Jinzhong2
刊名	Applied physics letters
	2008-10-13
卷号	93期号:15页码:2
ISSN号	0003-6951
DOI	10.1063/1.3003873
通讯作者	Zhou, zhiwen(xmuzhouzw@yahoo.com.cn)
英文摘要	In a recent letter, hsieh reported the growth of high-quality ge epilayers with a sige buffer thickness of only 0.45 mu m, a surface root-mean-square roughness of less than 0.4 nm, and a threading dislocation of 7.6 x 10(6) cm(-2) on si(+) pre-ion-implantation si substrate utilizing of strain relaxation enhancement by point defects and interface blocking of the dislocations. our comment has focused on x-ray diffraction data shown in fig. 3 of ref. 1. we demonstrate that the strain in ge epilayers is tensile, rather than compressive as misunderstood by the authors. (c) 2008 american institute of physics. [doi: 10.1063/1.3003873]
WOS关键词	THERMAL-EXPANSION
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000260125100111
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427361
专题	半导体研究所
通讯作者	Zhou, Zhiwen
作者单位	1.Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Zhiwen,Li, Cheng,Chen, Songyan,et al. Comment on "use of si(+) pre-ion-implantation on si substrate to enhance the strain relaxation of the ge(x)si(1-x) metamorphic buffer layer for the growth of ge layer on si substrate" [appl. phys. lett. 90, 083507 (2007)][J]. Applied physics letters,2008,93(15):2.
APA	Zhou, Zhiwen,Li, Cheng,Chen, Songyan,Lai, Hongkai,&Yu, Jinzhong.(2008).Comment on "use of si(+) pre-ion-implantation on si substrate to enhance the strain relaxation of the ge(x)si(1-x) metamorphic buffer layer for the growth of ge layer on si substrate" [appl. phys. lett. 90, 083507 (2007)].Applied physics letters,93(15),2.
MLA	Zhou, Zhiwen,et al."Comment on "use of si(+) pre-ion-implantation on si substrate to enhance the strain relaxation of the ge(x)si(1-x) metamorphic buffer layer for the growth of ge layer on si substrate" [appl. phys. lett. 90, 083507 (2007)]".Applied physics letters 93.15(2008):2.

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