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	Electronic structure and optical gain of wurtzite zno nanowires
	Zhang, Xiu-Wen; Li, Jingbo; Li, Shu-Shen; Xia, Jian-Bai
刊名	Applied physics letters
	2008-05-05
卷号	92期号:18页码:3
ISSN号	0003-6951
DOI	10.1063/1.2918445
通讯作者	Zhang, xiu-wen(zhxw99@semi.ac.cn)
英文摘要	The electronic structure and optical gain of wurtzite zno nanowires are investigated in the framework of effective-mass envelope-function theory. we found that as the elliptical aspect ratio e increases to be larger than a critical value, the hole ground states may change from optically dark to optically bright. the optical gain of zno nanowires increases as the hole density increases. for elliptical wire with large e, the y-polarized mode gain can be several thousand cm(-1), while the x-poiarized mode gain may be 26 times smaller than the former, so they can be used as ultraviolet linearly polarized lasers. (c) 2008 american institute of physics.
WOS关键词	ROOM-TEMPERATURE ; QUANTUM-WELLS ; NANOBELTS ; GROWTH ; ARRAYS ; LASERS ; WIRES ; FIELD
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000256485700001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427330
专题	半导体研究所
通讯作者	Zhang, Xiu-Wen
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Xiu-Wen,Li, Jingbo,Li, Shu-Shen,et al. Electronic structure and optical gain of wurtzite zno nanowires[J]. Applied physics letters,2008,92(18):3.
APA	Zhang, Xiu-Wen,Li, Jingbo,Li, Shu-Shen,&Xia, Jian-Bai.(2008).Electronic structure and optical gain of wurtzite zno nanowires.Applied physics letters,92(18),3.
MLA	Zhang, Xiu-Wen,et al."Electronic structure and optical gain of wurtzite zno nanowires".Applied physics letters 92.18(2008):3.

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