| Low threshold current density 1.3 mu m metamorphic ingaas/gaas quantum well laser diodes | |
| Wu, D.1; Wang, H.1; Wu, B.1; Ni, H.1; Huang, S.1; Xiong, Y.1; Wang, P.1; Han, Q.1; Niu, Z.1; Tangring, I.2 | |
| 刊名 | Electronics letters
 |
| 2008-03-27 | |
| 卷号 | 44期号:7页码:474-u6 |
| ISSN号 | 0013-5194 |
| DOI | 10.1049/el:20080106 |
| 通讯作者 | Wu, d.() |
| 英文摘要 | Very low threshold current density ingaas/ gaas quantum well laser diodes grown by molecular beam epitaxy on ingaas metamorphic buffers are reported. the lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mm is centred at 1337.2 nm; the threshold current density is 205 a/cm(2) at room temperature under continuous-wave operation. |
| WOS关键词 | CONTINUOUS-WAVE OPERATION ; 1.3-MU-M |
| WOS研究方向 | Engineering |
| WOS类目 | Engineering, Electrical & Electronic |
| 语种 | 英语 |
| 出版者 | INST ENGINEERING TECHNOLOGY-IET |
| WOS记录号 | WOS:000255465400014 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2427324 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wu, D. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China 2.Chalmers, Dept microtechnol & Nanosci, S-41296 Gothenburg, Sweden |
| 推荐引用方式 GB/T 7714 | Wu, D.,Wang, H.,Wu, B.,et al. Low threshold current density 1.3 mu m metamorphic ingaas/gaas quantum well laser diodes[J]. Electronics letters,2008,44(7):474-u6. |
| APA | Wu, D..,Wang, H..,Wu, B..,Ni, H..,Huang, S..,...&Wang, S. M..(2008).Low threshold current density 1.3 mu m metamorphic ingaas/gaas quantum well laser diodes.Electronics letters,44(7),474-u6. |
| MLA | Wu, D.,et al."Low threshold current density 1.3 mu m metamorphic ingaas/gaas quantum well laser diodes".Electronics letters 44.7(2008):474-u6. |
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