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	Fabrication and transport properties of zno/nb-1 wt %-doped srtio(3) epitaxial heterojunctions
	Wu, Yunlong1; Zhang, Liuwan1; Xie, Guanlin1; Zhu, Jia-Lin1; Chen, Yonghai2
刊名	Applied physics letters
	2008-01-07
卷号	92期号:1页码:3
ISSN号	0003-6951
DOI	10.1063/1.2831913
通讯作者	Zhang, liuwan(lwzhang@tsinghua.edu.cn)
英文摘要	(110) zno/(001) nb-1 wt %-doped srtio(3) n-n type heteroepitaxial junctions were fabricated using the pulse laser deposition method. a diodelike current behavior was observed. different from conventional p-n junctions or schottky diodes, the diffusion voltage was found to increase with temperature. at all temperatures, the forward current was perfectly fitted on the thermionic emission model. the band bending at the interface can qualitatively explain our results, and the extracted high ideality factor at low temperatures, as well as large saturation currents, is ascribed to the deep-level-assisted tunneling current through the junction. (c) 2008 american institute of physics.
WOS关键词	MANGANITE-BASED HETEROJUNCTION ; SCHOTTKY CONTACTS ; TUNNELING CURRENT ; ZNO
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000252284200083
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427314
专题	半导体研究所
通讯作者	Zhang, Liuwan
作者单位	1.Tsing Hua Univ, Dept Phys, Adv Mat Lab, Beijing 100084, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wu, Yunlong,Zhang, Liuwan,Xie, Guanlin,et al. Fabrication and transport properties of zno/nb-1 wt %-doped srtio(3) epitaxial heterojunctions[J]. Applied physics letters,2008,92(1):3.
APA	Wu, Yunlong,Zhang, Liuwan,Xie, Guanlin,Zhu, Jia-Lin,&Chen, Yonghai.(2008).Fabrication and transport properties of zno/nb-1 wt %-doped srtio(3) epitaxial heterojunctions.Applied physics letters,92(1),3.
MLA	Wu, Yunlong,et al."Fabrication and transport properties of zno/nb-1 wt %-doped srtio(3) epitaxial heterojunctions".Applied physics letters 92.1(2008):3.

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