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	Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure
	Kazanskii, A. G.1; Kong, Guanglin2; Zeng, Xiangbo2; Hao, Huiying2; Liu, Fengzhen3
刊名	Journal of non-crystalline solids
	2008-05-01
卷号	354期号:19-25页码:2282-2285
关键词	Silicon Conductivity Chemical vapor deposition Microcrystallinity Absorption Photoconductivity
ISSN号	0022-3093
DOI	10.1016/j.jnoncrysol.2007.09.016
通讯作者	Kazanskii, a. g.(kazanski@phys.msu.ru)
英文摘要	The results of conductivity, photoconductivity and constant photocurrent method absorption measurements by dc and ac methods in hydrogenated silicon films with mixed amorphous-nanocrystalline structure are presented. a series of diphasic silicon films was deposited by very high frequency plasma enhanced chemical vapor deposition technique, using different hydrogen dilution ratios of silane. the increase of hydrogen dilution ratio results in five orders of magnitude increase of conductivity and a sharp increase of grain volume fraction. the comparison of the absorption spectra obtained by dc and ac methods showed that they are similar for silicon films with the predominantly amorphous structure and films with high grain volume fraction. however we found a dramatic discrepancy between the absorption spectra obtained by dc and ac constant photocurrent methods in silicon films deposited in the regime of the structure transition from amorphous to nanocrystalline state. ac constant photocurrent method gives higher absorption coefficient than dc constant photocurrent method in the photon energy range of 1.2-1.7 ev. this result indicates the possibility of crystalline grains contribution to absorption spectra measured by ac constant photocurrent method in silicon films with intermediate crystalline grain volume fraction. (c) 2008 published by elsevier b.v.
WOS关键词	MICROCRYSTALLINE SILICON ; AC ; TRANSPORT
WOS研究方向	Materials Science
WOS类目	Materials Science, Ceramics ; Materials Science, Multidisciplinary
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000256500400048
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427226
专题	半导体研究所
通讯作者	Kazanskii, A. G.
作者单位	1.Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119991, Russia 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Grad Sch, Coll Phys Sci, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Kazanskii, A. G.,Kong, Guanglin,Zeng, Xiangbo,et al. Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure[J]. Journal of non-crystalline solids,2008,354(19-25):2282-2285.
APA	Kazanskii, A. G.,Kong, Guanglin,Zeng, Xiangbo,Hao, Huiying,&Liu, Fengzhen.(2008).Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure.Journal of non-crystalline solids,354(19-25),2282-2285.
MLA	Kazanskii, A. G.,et al."Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure".Journal of non-crystalline solids 354.19-25(2008):2282-2285.

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