CORC  > 半导体研究所
Electronic structure and optical properties of gan with mn-doping
Xing Hai-Ying1; Fan Guang-Han1; Zhao De-Gang2; He Miao1; Zhang Yong1; Zhou Tian-Ming1
刊名Acta physica sinica
2008-10-01
卷号57期号:10页码:6513-6519
关键词Ga1-xmnxn First-principles Electronic structure Optical properties
ISSN号1000-3290
通讯作者Fan guang-han(gfan@scnu.edu.cn)
英文摘要Calculations of the electronic structure and the density of states of gan with mn are carried out by means of first-principles plane-wave pesudopotential method based on density functional theory. the results reveal a 100% spin polarized impurity band in band structure of ga1-xmnxn due to hybridization of mn 3d and n 2p orbitals. the material is half metallic and suited for spin injectors. in addition, a peak of refractive index can be observed near the energy gap. the absorption coefficient increases in the uv region with the increase of the mn content.
WOS关键词MOLECULAR-BEAM EPITAXY ; ROOM-TEMPERATURE ; IMPLANTED GAN ; 1ST-PRINCIPLES ; ALN ; SEMICONDUCTORS ; BEHAVIOR ; FILMS ; GAMNN ; ZNO
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
出版者CHINESE PHYSICAL SOC
WOS记录号WOS:000260144300071
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2427225
专题半导体研究所
通讯作者Fan Guang-Han
作者单位1.S China Normal Univ, Inst Optoelect Mat & Technol, Guangzhou 501631, Guangdong, Peoples R China
2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Xing Hai-Ying,Fan Guang-Han,Zhao De-Gang,et al. Electronic structure and optical properties of gan with mn-doping[J]. Acta physica sinica,2008,57(10):6513-6519.
APA Xing Hai-Ying,Fan Guang-Han,Zhao De-Gang,He Miao,Zhang Yong,&Zhou Tian-Ming.(2008).Electronic structure and optical properties of gan with mn-doping.Acta physica sinica,57(10),6513-6519.
MLA Xing Hai-Ying,et al."Electronic structure and optical properties of gan with mn-doping".Acta physica sinica 57.10(2008):6513-6519.
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