| Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic alas/in0.53ga0.47as/inas resonant tunnelling diodes | |
| Zhang Yang1; Han Chun-Lin2; Gao Jian-Feng2; Zhu Zhan-Ping1; Wang Bao-Qiang1; Zeng Yi-Ping1 | |
| 刊名 | Chinese physics b
 |
| 2008-04-01 | |
| 卷号 | 17期号:4页码:1472-1474 |
| 关键词 | Resonant tunnelling diode Molecular beam epitaxy |
| ISSN号 | 1674-1056 |
| 通讯作者 | Zhang yang(zhang_yang@semi.ac.cn) |
| 英文摘要 | This paper investigates the dependence of current-voltage characteristics of alas/in0.53ga0.47as/inas resonant tunnelling diodes (rtds) on spacer layer thickness. it finds that the peak and the valley current density j in the negative differential resistance (ndr) region depends strongly on the thickness of the spacer layer. the measured peak to valley current ratio of rtds studied here is shown to improve while the current density through rtds decreases with increasing spacer layer thickness below a critical value. |
| WOS关键词 | ROOM-TEMPERATURE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000255096900054 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2427211 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang Yang |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China 2.Nanjing Elect Devices Inst, State Key Lab Monolith Integrated Circuit & Modul, Nanjing 210016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang Yang,Han Chun-Lin,Gao Jian-Feng,et al. Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic alas/in0.53ga0.47as/inas resonant tunnelling diodes[J]. Chinese physics b,2008,17(4):1472-1474. |
| APA | Zhang Yang,Han Chun-Lin,Gao Jian-Feng,Zhu Zhan-Ping,Wang Bao-Qiang,&Zeng Yi-Ping.(2008).Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic alas/in0.53ga0.47as/inas resonant tunnelling diodes.Chinese physics b,17(4),1472-1474. |
| MLA | Zhang Yang,et al."Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic alas/in0.53ga0.47as/inas resonant tunnelling diodes".Chinese physics b 17.4(2008):1472-1474. |
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