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	Structural characterization of mn implanted alinn
	Majid, Abdul1; Ali, Akbar1; Zhu, J. J.2; Wang, Y. T.2
刊名	Journal of physics d-applied physics
	2008-06-07
卷号	41期号:11页码:6
ISSN号	0022-3727
DOI	10.1088/0022-3727/41/11/115404
通讯作者	Majid, abdul(abdulmajid40@yahoo.com)
英文摘要	Alinn/gan thin films were implanted with mn ions and subsequently annealed isochronically at 750 and 850 degrees c. x-ray diffraction and rutherford backscattering spectroscopy (rbs) techniques were employed to study the microstructural properties of the implanted/annealed samples. the effect of annealing on implantation-induced strain in thin films has been studied in detail. the strain was found to increase with dose until it reached a saturation value and after that it started decreasing with a further increase in the dose. rbs measurements indicated the atomic diffusion of in, al, ga and mn in implanted samples. the in- and out-diffusion of atoms has been observed after annealing at 750 degrees c and 850 degrees c, respectively. strong decomposition of the samples took place when annealed at 850 degrees c.
WOS关键词	ION-IMPLANTATION ; THIN-FILMS ; GAN
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000256172200042
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427189
专题	半导体研究所
通讯作者	Majid, Abdul
作者单位	1.Quaid I Azam Univ, Adv Mat Phys Lab, Islamabad, Pakistan 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Majid, Abdul,Ali, Akbar,Zhu, J. J.,et al. Structural characterization of mn implanted alinn[J]. Journal of physics d-applied physics,2008,41(11):6.
APA	Majid, Abdul,Ali, Akbar,Zhu, J. J.,&Wang, Y. T..(2008).Structural characterization of mn implanted alinn.Journal of physics d-applied physics,41(11),6.
MLA	Majid, Abdul,et al."Structural characterization of mn implanted alinn".Journal of physics d-applied physics 41.11(2008):6.

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