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	The growth temperatures dependence of optical and electrical properties of inn films
	Liu Bin1,2; Zhang Rong1,2; Xie ZiLi1,2; Xiu XiangQian1,2; Li Liang1,2; Kong JieYing1,2; Yu HuiQiang1,2; Han Pin1,2; Gu ShuLin1,2; Shi Yi1,2
刊名	Science in china series g-physics mechanics & astronomy
	2008-03-01
卷号	51期号:3页码:237-242
关键词	Metalorganic chemical vapor deposition X-ray diffraction Photoluminescence
ISSN号	1672-1799
DOI	10.1007/s11433-008-0036-3
通讯作者	Zhang rong(rzhang@nju.edu.cn)
英文摘要	Inn films grown on sapphire at different substrate temperatures from 550 degrees c to 700 degrees c by metalorganic chemical vapor deposition were investigated. the low-temperature gan nucleation layer with high-temperature annealing (1100 degrees c) was used as a buffer for main inn layer growth. x-ray diffraction and raman scattering measurements reveal that the quality of inn films can be improved by increasing the growth temperature to 600 degrees c. further high substrate temperatures may promote the thermal decomposition of inn films and result in poor crystallinity and surface morphology. the photoluminescence and hall measurements were employed to characterize the optical and electrical properties of inn films, which also indicates strong growth temperature dependence. the inn films grown at temperature of 600 degrees c show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 ev. for a 600 nm thick inn film grown at 600 degrees c, the hall mobility achieves up to 938 cm(2)/vs with electron concentration of 3.9 x 10(18) cm(-3).
WOS关键词	VAPOR-PHASE EPITAXY ; MOVPE INN ; BAND-GAP ; ALLOYS
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	SCIENCE PRESS
WOS记录号	WOS:000253756000003
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427188
专题	半导体研究所
通讯作者	Zhang Rong
作者单位	1.Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China 2.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu Bin,Zhang Rong,Xie ZiLi,et al. The growth temperatures dependence of optical and electrical properties of inn films[J]. Science in china series g-physics mechanics & astronomy,2008,51(3):237-242.
APA	Liu Bin.,Zhang Rong.,Xie ZiLi.,Xiu XiangQian.,Li Liang.,...&Wang ZhanGuo.(2008).The growth temperatures dependence of optical and electrical properties of inn films.Science in china series g-physics mechanics & astronomy,51(3),237-242.
MLA	Liu Bin,et al."The growth temperatures dependence of optical and electrical properties of inn films".Science in china series g-physics mechanics & astronomy 51.3(2008):237-242.

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