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	Reply to "comment on 'spin-dependent tunneling through a symmetric semiconductor barrier: the dresselhaus effect'"
	Wang, L. G.1; Yang, W.1; Chang, K.1; Chan, K. S.2
刊名	Physical review b
	2007-11-01
卷号	76期号:19页码:2
ISSN号	1098-0121
DOI	10.1103/physrevb.76.197302
通讯作者	Wang, l. g.()
英文摘要	The present paper is the reply to sandu's comment on our paper [phys. rev. b 72, 153314 (2005)], i.e., the effect of the current operator on the spin-dependent tunneling through a barrier in the presence of the dresselhaus spin-orbit interaction (dsoi). we demonstrate theoretically and numerically that our previous numerical result is correct when there is no dsoi in the contact region and it remains a good approximation in the presence of the k(3)-dsoi in the contact regions.
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	AMER PHYSICAL SOC
WOS记录号	WOS:000251326800158
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427165
专题	半导体研究所
通讯作者	Wang, L. G.
作者单位	1.Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China 2.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Wang, L. G.,Yang, W.,Chang, K.,et al. Reply to "comment on 'spin-dependent tunneling through a symmetric semiconductor barrier: the dresselhaus effect'"[J]. Physical review b,2007,76(19):2.
APA	Wang, L. G.,Yang, W.,Chang, K.,&Chan, K. S..(2007).Reply to "comment on 'spin-dependent tunneling through a symmetric semiconductor barrier: the dresselhaus effect'".Physical review b,76(19),2.
MLA	Wang, L. G.,et al."Reply to "comment on 'spin-dependent tunneling through a symmetric semiconductor barrier: the dresselhaus effect'"".Physical review b 76.19(2007):2.

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