Reply to "comment on 'spin-dependent tunneling through a symmetric semiconductor barrier: the dresselhaus effect'" | |
Wang, L. G.1; Yang, W.1; Chang, K.1; Chan, K. S.2 | |
刊名 | Physical review b
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2007-11-01 | |
卷号 | 76期号:19页码:2 |
ISSN号 | 1098-0121 |
DOI | 10.1103/physrevb.76.197302 |
通讯作者 | Wang, l. g.() |
英文摘要 | The present paper is the reply to sandu's comment on our paper [phys. rev. b 72, 153314 (2005)], i.e., the effect of the current operator on the spin-dependent tunneling through a barrier in the presence of the dresselhaus spin-orbit interaction (dsoi). we demonstrate theoretically and numerically that our previous numerical result is correct when there is no dsoi in the contact region and it remains a good approximation in the presence of the k(3)-dsoi in the contact regions. |
WOS研究方向 | Physics |
WOS类目 | Physics, Condensed Matter |
语种 | 英语 |
出版者 | AMER PHYSICAL SOC |
WOS记录号 | WOS:000251326800158 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2427165 |
专题 | 半导体研究所 |
通讯作者 | Wang, L. G. |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China 2.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, L. G.,Yang, W.,Chang, K.,et al. Reply to "comment on 'spin-dependent tunneling through a symmetric semiconductor barrier: the dresselhaus effect'"[J]. Physical review b,2007,76(19):2. |
APA | Wang, L. G.,Yang, W.,Chang, K.,&Chan, K. S..(2007).Reply to "comment on 'spin-dependent tunneling through a symmetric semiconductor barrier: the dresselhaus effect'".Physical review b,76(19),2. |
MLA | Wang, L. G.,et al."Reply to "comment on 'spin-dependent tunneling through a symmetric semiconductor barrier: the dresselhaus effect'"".Physical review b 76.19(2007):2. |
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