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	Growth and characterization of algan/aln/gan hemt structures with a compositionally step-graded algan barrier layer
	Ma Zhi-Yong; Wang Xiao-Liang; Hu Guo-Xin; Ran Jun-Xue; Xiao Hong-Ling; Luo Wei-Jun; Tang Jian; Li Jian-Ping; Li Jin-Min
刊名	Chinese physics letters
	2007-06-01
卷号	24期号:6页码:1705-1708
ISSN号	0256-307X
通讯作者	Ma zhi-yong(mazhiyong@mail.semi.ac.cn)
英文摘要	A new algan/aln/gan high electron mobility transistor (hemt) structure using a compositionally step-graded algan barrier layer is grown on sapphire by metalorganic chemical vapour deposition (mocvd). the structure demonstrates significant enhancement of two-dimensional electron gas (2deg) mobility and smooth surface morphology compared with the conventional hemt structure with high al composition algan barrier. the high 2deg mobility of 1806 cm(2)/vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5 mu m x 5 mu m are attributed to the improvement of interfacial and crystal quality by employing the step-graded barrier to accommodate the large lattice mismatch stress. the 2deg sheet density is independent of the measurement temperature, showing the excellent 2deg confinement of the step-graded structure. a low average sheet resistance of 314.5 omega/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. hemt devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 ms/mm and a maximum drain current density of 800 ma/mm.
WOS关键词	ELECTRON-MOBILITY TRANSISTORS ; VAPOR-PHASE EPITAXY ; AL-CONTENT ; TRANSPORT-PROPERTIES ; STRAINED ALGAN ; HETEROSTRUCTURES ; SAPPHIRE ; MOCVD ; GAN
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000247045400075
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427149
专题	半导体研究所
通讯作者	Ma Zhi-Yong
作者单位	Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Ma Zhi-Yong,Wang Xiao-Liang,Hu Guo-Xin,et al. Growth and characterization of algan/aln/gan hemt structures with a compositionally step-graded algan barrier layer[J]. Chinese physics letters,2007,24(6):1705-1708.
APA	Ma Zhi-Yong.,Wang Xiao-Liang.,Hu Guo-Xin.,Ran Jun-Xue.,Xiao Hong-Ling.,...&Li Jin-Min.(2007).Growth and characterization of algan/aln/gan hemt structures with a compositionally step-graded algan barrier layer.Chinese physics letters,24(6),1705-1708.
MLA	Ma Zhi-Yong,et al."Growth and characterization of algan/aln/gan hemt structures with a compositionally step-graded algan barrier layer".Chinese physics letters 24.6(2007):1705-1708.

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