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	1-mm gate periphery algan/ain/gan hemts on sic with output power of 9.39 w at 8 ghz
	Wang, X. L.; Cheng, T. S.; Ma, Z. Y.; Hu, Gx; Xiao, H. L.; Ran, J. X.; Wang, C. M.; Luo, W. J.
刊名	Solid-state electronics
	2007-03-01
卷号	51期号:3页码:428-432
关键词	Algan/gan Hemt Mocvd Power device Sic substrates
ISSN号	0038-1101
DOI	10.1016/j.sse.2006.12.010
通讯作者	Wang, x. l.(xlwang@red.semi.ac.cn)
英文摘要	Algan/aln/gan high electron mobility transistor (hemt) structures with high mobility gan channel layer were grown on 50 min diameter semi-insulating (si) 6h-sic substrates by metalorganic chemical vapor deposition and large periphery hemt devices were fabricated and characterized. high two-dimensional electron gas mobility of 2215 cm(2)/v s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. the 50 mm diameter hemt wafer exhibited a low average sheet resistance of 251.0 omega/square, with the resistance uniformity of 2.02%. atomic force microscopy measurements revealed a smooth algan surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. the 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 w at 8 ghz, with a power added efficiency of 46.2% and power gain of 7.54 db. a maximum drain current density of 1300 ma/mm, an extrinsic transconductance of 382 ms/mm, a current gain cutoff frequency of 31 ghz and a maximum frequency of oscillation 60 ghz were also achieved in the same devices. (c) 2007 elsevier ltd. all rights reserved.
WOS关键词	PERFORMANCE ; MOBILITY ; MOCVD ; PLATE
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000246313400015
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427116
专题	半导体研究所
通讯作者	Wang, X. L.
作者单位	1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Nanjing Electon Device Inst, Nanjing 210016, Peoples R China
推荐引用方式 GB/T 7714	Wang, X. L.,Cheng, T. S.,Ma, Z. Y.,et al. 1-mm gate periphery algan/ain/gan hemts on sic with output power of 9.39 w at 8 ghz[J]. Solid-state electronics,2007,51(3):428-432.
APA	Wang, X. L..,Cheng, T. S..,Ma, Z. Y..,Hu, Gx.,Xiao, H. L..,...&Luo, W. J..(2007).1-mm gate periphery algan/ain/gan hemts on sic with output power of 9.39 w at 8 ghz.Solid-state electronics,51(3),428-432.
MLA	Wang, X. L.,et al."1-mm gate periphery algan/ain/gan hemts on sic with output power of 9.39 w at 8 ghz".Solid-state electronics 51.3(2007):428-432.

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