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	Metamorphic ingaas quantum wells for light emission at 1.3-1.6 mu m
	Wang, S. M.; Tangring, I.; Gu, Q. F.; Sadeghi, M.; Larsson, A.; Wang, X. D.; Ma, C. H.; Buyanova, I. A.; Chen, W. M.
刊名	Thin solid films
	2007-03-26
卷号	515期号:10页码:4348-4351
关键词	Metamorphic Ingaas quantum well Light emission
ISSN号	0040-6090
DOI	10.1016/j.tsf.2006.07.098
通讯作者	Wang, s. m.(shumin.wang@mc2.chalmers.se)
英文摘要	Metamorphic ingaas quantum well structures grown on gaas reveal strong light emission at 1.3-1.6 mu m, smooth surface with an average roughness below 2 nm. and good rectifying i-v characteristics. dark line defects are found in the qw post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. some challenges of epitaxial growth using this method for laser applications are discussed. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词	ROOM-TEMPERATURE ; LASER-DIODES ; DOT LASERS ; GAAS ; DISLOCATIONS
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000245167000008
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427108
专题	半导体研究所
通讯作者	Wang, S. M.
作者单位	1.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden 2.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China 3.Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
推荐引用方式 GB/T 7714	Wang, S. M.,Tangring, I.,Gu, Q. F.,et al. Metamorphic ingaas quantum wells for light emission at 1.3-1.6 mu m[J]. Thin solid films,2007,515(10):4348-4351.
APA	Wang, S. M..,Tangring, I..,Gu, Q. F..,Sadeghi, M..,Larsson, A..,...&Chen, W. M..(2007).Metamorphic ingaas quantum wells for light emission at 1.3-1.6 mu m.Thin solid films,515(10),4348-4351.
MLA	Wang, S. M.,et al."Metamorphic ingaas quantum wells for light emission at 1.3-1.6 mu m".Thin solid films 515.10(2007):4348-4351.

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