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	Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type gan?
	Zhao, D. G.; Jiang, D. S.; Zhu, J. J.; Liu, Z. S.; Zhang, S. M.; Liang, J. W.; Yang, H.
刊名	Journal of applied physics
	2007-12-01
卷号	102期号:11页码:6
ISSN号	0021-8979
DOI	10.1063/1.2821154
通讯作者	Zhao, d. g.(dgzhao@red.semi.ac.cn)
英文摘要	It is studied whether there is any regular relationship between the yellow luminescence band and electron mobility of n-type gan. for a series of gan samples grown with the same si doping, it is found that the electron mobility decreases with an increase of relative intensity of yellow luminescence, accompanied by an increase of edge dislocation density. further research indicates that it is acceptors introduced by edge dislocations which lead to the concomitant changes of yellow luminescence and electron mobility. similar changes are induced by si doping in the n-type gan samples with relatively low edge dislocation density. however, the relationship between the yellow luminescence and electron mobility of n-type gan is not a simple one. a light si doping may simultaneously increase yellow luminescence and electron mobility when si doping plays a dominant role in reducing the carrier scattering. this means that even the intensity of yellow luminescence is often used as an indicator of material quality for gan, it does not have any monotonous correlation with the electron mobility of gan. (c) 2007 american institute of physics.
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; MOLECULAR-BEAM EPITAXY ; X-RAY-DIFFRACTION ; MG-DOPED GAN ; UNDOPED GAN ; PHOTOLUMINESCENCE BANDS ; THREADING DISLOCATIONS ; POSITRON-ANNIHILATION ; GROWTH STOICHIOMETRY ; GALLIUM NITRIDE
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000251678800044
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427048
专题	半导体研究所
通讯作者	Zhao, D. G.
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, D. G.,Jiang, D. S.,Zhu, J. J.,et al. Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type gan?[J]. Journal of applied physics,2007,102(11):6.
APA	Zhao, D. G..,Jiang, D. S..,Zhu, J. J..,Liu, Z. S..,Zhang, S. M..,...&Yang, H..(2007).Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type gan?.Journal of applied physics,102(11),6.
MLA	Zhao, D. G.,et al."Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type gan?".Journal of applied physics 102.11(2007):6.

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