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	Observations on subband electron properties in in0.65ga0.35as/in0.52al0.48as mm-hemt with si delta-doped on the barriers
	Zhou Wen-Zheng; Lin Tie; Shang Li-Yan; Huang Zhi-Ming; Zhu Bo; Cui Li-Jie; Gao Hong-Ling; Li Dong-Lin; Guo Shao-Ling; Gui Yong-Sheng
刊名	Acta physica sinica
	2007-07-01
卷号	56期号:7页码:4143-4147
关键词	Sdh oscillation Two-dimensional electron gas Fft analysis Self-consistently calculation
ISSN号	1000-3290
通讯作者	Zhou wen-zheng()
英文摘要	Magneto-transport measurements have been carried out on a si delta-doped in0.65ga0.35as/in0.52al0.48as metamorphic high-electron-mobility transistor with inp substrate in a temperature range between 1.5 and 60 k under magnetic field up to 13 t. we studied the shubnikov-de haas (sdh) effect and the hall effect for the in0.65ga0.35as/in0.52al0.48as single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. we solve the schrodinger-kohn-sham equation in conjunction with the poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the fermi energy. the calculational results are well consistent with the results of experiments. both experimental and calculational results indicate that almost all of the delta-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60 k.
WOS关键词	QUANTUM-WELLS ; MOBILITY TRANSISTOR ; SPIN-ORBIT ; CHANNEL ; HETEROSTRUCTURES ; HETEROJUNCTION ; SCATTERING ; INDIUM
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000248134500084
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427007
专题	半导体研究所
通讯作者	Zhou Wen-Zheng
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 2.Guangxi Univ, Coll Phys Sci & Engn Technol, Nanning 530004, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 4.E China Normal Univ, Joint Lab Imaging Informat, ECNU, SITP, Shanghai 200062, Peoples R China
推荐引用方式 GB/T 7714	Zhou Wen-Zheng,Lin Tie,Shang Li-Yan,et al. Observations on subband electron properties in in0.65ga0.35as/in0.52al0.48as mm-hemt with si delta-doped on the barriers[J]. Acta physica sinica,2007,56(7):4143-4147.
APA	Zhou Wen-Zheng.,Lin Tie.,Shang Li-Yan.,Huang Zhi-Ming.,Zhu Bo.,...&Chu Jun-Hao.(2007).Observations on subband electron properties in in0.65ga0.35as/in0.52al0.48as mm-hemt with si delta-doped on the barriers.Acta physica sinica,56(7),4143-4147.
MLA	Zhou Wen-Zheng,et al."Observations on subband electron properties in in0.65ga0.35as/in0.52al0.48as mm-hemt with si delta-doped on the barriers".Acta physica sinica 56.7(2007):4143-4147.

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