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	Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd
	Zhao, Yongmei; Sun, Guosheng; Liu, Xingfang; Li, Jiaye; Zhao, Wanshun; Wang, Lei; Luo, Muchang; Li, Jinmin
刊名	Modern physics letters b
	2007-09-20
卷号	21期号:22页码:1437-1445
关键词	Aluminum nitride Low pressure metalorganic chemical vapor deposition (lp-mocvd) V/iii ratio Preferential orientation growth mechanism
ISSN号	0217-9849
通讯作者	Zhao, yongmei(ymzhao@semi.ac.cn)
英文摘要	Aluminum nitride (ain) thin films were deposited on si (111) substrates by low pressure metalorganic chemical vapor deposition system. the effects of the v/iii ratios on the film structure and surface morphology were systematically studied. the chemical states and vibration modes of ain films were characterized by x-ray photoelectron spectroscopy and fourier transform infrared spectrometer. the optical absorption property of the ain films, characterized by ultraviolet-visible-near infrared spectrophotometer, exhibited a sharp absorption near the wavelength of 206 mm. the ain (002) preferential orientation growth was obtained at the v/iii ratio of 10,000 and the preferential growth mechanism is presented in this paper according to the thermodynamics and kinetics process of the ain growth.
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; ALUMINUM NITRIDE FILMS ; ALN BUFFER LAYER ; LOW-TEMPERATURE ; SI
WOS研究方向	Physics
WOS类目	Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical
语种	英语
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
WOS记录号	WOS:000251972800001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426996
专题	半导体研究所
通讯作者	Zhao, Yongmei
作者单位	Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Yongmei,Sun, Guosheng,Liu, Xingfang,et al. Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd[J]. Modern physics letters b,2007,21(22):1437-1445.
APA	Zhao, Yongmei.,Sun, Guosheng.,Liu, Xingfang.,Li, Jiaye.,Zhao, Wanshun.,...&Li, Jinmin.(2007).Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd.Modern physics letters b,21(22),1437-1445.
MLA	Zhao, Yongmei,et al."Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd".Modern physics letters b 21.22(2007):1437-1445.

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