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	Depth dependence of structural quality in inn grown by metalorganic chemical vapor deposition
	Wang, H.; Huang, Y.; Sun, Q.; Chen, J.; Zhu, J. J.; Wang, L. L.; Wang, Y. T.; Yang, H.; Wu, M. F.; Qu, Y. H.
刊名	Materials letters
	2007
卷号	61期号:2页码:516-519
关键词	X-ray diffraction Rutherford backscattering Metalorganic chemical vapor deposition Inn
ISSN号	0167-577X
DOI	10.1016/j.matlet.2006.05.001
通讯作者	Wang, h.(wangh@red.semi.ac.cn)
英文摘要	Rutherford backscattering and channeling is combined with x-ray diffraction to study the depth dependence of crystalline quality in inn layers grown by metalorganic chemical vapor deposition on sapphire substrate. the poorest crystalline quality in inn layer is produced at the intermediate region over 100 nm away from the inn/sapphire interface. with increasing layer thickness the crystalline quality improves to a certain degree dependent on the growth temperature. the inn sample grown at 450 degrees c is found to be more homogeneous than the sample grown at 550 degrees c. the difference in the defect profile is explained by the temperature-dependent growth modes. the inhomogeneity of structural quality and related properties such as carrier concentration and strain field is possibly the reason to observe a high energy wing in pl spectrum of the inn sample grown at 550 degrees c. (c) 2006 elsevier b.v all rights reserved.
WOS关键词	ALN BUFFER LAYER ; FILMS
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000243253800050
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426960
专题	半导体研究所
通讯作者	Wang, H.
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Peking Univ, Sch Phys, Dept Tech Phys, Beijing 100871, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang, H.,Huang, Y.,Sun, Q.,et al. Depth dependence of structural quality in inn grown by metalorganic chemical vapor deposition[J]. Materials letters,2007,61(2):516-519.
APA	Wang, H..,Huang, Y..,Sun, Q..,Chen, J..,Zhu, J. J..,...&Jiang, D. S..(2007).Depth dependence of structural quality in inn grown by metalorganic chemical vapor deposition.Materials letters,61(2),516-519.
MLA	Wang, H.,et al."Depth dependence of structural quality in inn grown by metalorganic chemical vapor deposition".Materials letters 61.2(2007):516-519.

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