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Using different carrier gases to control aln film stress and the effect on morphology, structural properties and optical properties
Hu, W. G.; Liu, X. L.; Jiao, C. M.; Wei, H. Y.; Kang, T. T.; Zhang, P. F.; Zhang, R. Q.; Fan, H. B.; Zhu, Q. S.
刊名Journal of physics d-applied physics
2007-12-07
卷号40期号:23页码:7462-7466
ISSN号0022-3727
DOI10.1088/0022-3727/40/23/030
通讯作者Hu, w. g.(sivamay@semi.ac.cn)
英文摘要On the metalorganic chemical vapour deposition growth of aln, by adjusting h-2+n-2 mixture gas components, we can gradually control island dimension. during the volmer - weber growth, the 2-dimensional coalescence of the islands induces an intrinsic tensile stress. then, this process can control the in-plane stress: with the n-2 content increasing from 0 to 3 slm, the in-plane stress gradually changes from 1.5 gpa tensile stress to - 1.2gpa compressive stress. especially, with the 0.5 slm n-2 + 2.5 slm h-2 mixture gas, the in-plane stress is only 0.1 gpa, which is close to the complete relaxation state. under this condition, this sample has good crystal and optical qualities.
WOS关键词VAPOR-PHASE EPITAXY ; WURTZITE-TYPE CRYSTALS ; THIN-FILMS ; ALUMINUM NITRIDE ; INTRINSIC STRESS ; GAN ; SAPPHIRE ; AIN ; DEPOSITION ; STRAIN
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000251797900040
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2426905
专题半导体研究所
通讯作者Hu, W. G.
作者单位Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 10083, Peoples R China
推荐引用方式
GB/T 7714
Hu, W. G.,Liu, X. L.,Jiao, C. M.,et al. Using different carrier gases to control aln film stress and the effect on morphology, structural properties and optical properties[J]. Journal of physics d-applied physics,2007,40(23):7462-7466.
APA Hu, W. G..,Liu, X. L..,Jiao, C. M..,Wei, H. Y..,Kang, T. T..,...&Zhu, Q. S..(2007).Using different carrier gases to control aln film stress and the effect on morphology, structural properties and optical properties.Journal of physics d-applied physics,40(23),7462-7466.
MLA Hu, W. G.,et al."Using different carrier gases to control aln film stress and the effect on morphology, structural properties and optical properties".Journal of physics d-applied physics 40.23(2007):7462-7466.
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