| Different temperature and pressure behavior of band edge and n-cluster emissions in gaas0.973sb0.022n0.005 | |
| Wang, W. J.; Su, F. H.; Ding, K.; Li, G. H.; Yoon, S. F.; Fan, W. J.; Wicaksono, S.; Ma, B. S. | |
| 刊名 | Physical review b
 |
| 2006-11-01 | |
| 卷号 | 74期号:19页码:6 |
| ISSN号 | 1098-0121 |
| DOI | 10.1103/physrevb.74.195201 |
| 通讯作者 | Wang, w. j.() |
| 英文摘要 | The photoluminescence of gaas0.973sb0.022n0.005 was investigated at different temperatures, pressures, and excitation powers. both the alloy band edge and the n-cluster emissions, which show different temperature and excitation power dependences, were observed. the pressure coefficients obtained in the pressure range of 0-1.4 gpa for the band edge and n-related emissions are 67 and 45 mev/gpa, respectively. the n-cluster emissions shift to higher energy in the lower pressure range and then begin to redshift at about 8.5 gpa. this redshift is possibly caused by the increase of the x-valley component in the n-related states with increasing pressure. a rapid decrease of the emission intensity of the n-related band was also observed when the pressure exceeded about 8 gpa. |
| WOS关键词 | HYDROSTATIC-PRESSURE ; GAINNAS ALLOYS ; QUANTUM-WELLS ; GAASN ALLOYS ; PHOTOLUMINESCENCE ; NITROGEN ; GAP ; TRANSITIONS ; DEPENDENCE ; EXCITONS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | AMERICAN PHYSICAL SOC |
| WOS记录号 | WOS:000242409200068 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2426879 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, W. J. |
| 作者单位 | 1.State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore |
| 推荐引用方式 GB/T 7714 | Wang, W. J.,Su, F. H.,Ding, K.,et al. Different temperature and pressure behavior of band edge and n-cluster emissions in gaas0.973sb0.022n0.005[J]. Physical review b,2006,74(19):6. |
| APA | Wang, W. J..,Su, F. H..,Ding, K..,Li, G. H..,Yoon, S. F..,...&Ma, B. S..(2006).Different temperature and pressure behavior of band edge and n-cluster emissions in gaas0.973sb0.022n0.005.Physical review b,74(19),6. |
| MLA | Wang, W. J.,et al."Different temperature and pressure behavior of band edge and n-cluster emissions in gaas0.973sb0.022n0.005".Physical review b 74.19(2006):6. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论