Influence of aln interfacial layer on electrical properties of high-al-content al0.45ga0.55n/gan hemt structure | |
Wang, Cuimei; Wang, Xiaoliang; Hu, Guoxin; Wang, Junxi; Li, Jianping; Wang, Zhanguo | |
刊名 | Applied surface science
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2006-11-15 | |
卷号 | 253期号:2页码:762-765 |
关键词 | Algan/aln/gan Two-dimensional electron gas Mocvd |
ISSN号 | 0169-4332 |
DOI | 10.1016/j.apsusc.2006.01.017 |
通讯作者 | Wang, xiaoliang(xlwang@red.semi.ac.cn) |
英文摘要 | Unintentionally doped high-al-content al0.45ga0.55n/gan high electron mobility transistor (hemt) structures with and without aln interfacial layer were grown by metal-organic chemical vapor deposition (mocvd) on two-inch sapphire substrates. the effects of aln interfacial layer on the electrical properties were investigated. at 300 k, high two-dimensional electron gas (2deg) density of 1.66 x 10(11) cm(-2) and high electron mobility of 1346 cm(2) v-1 s(-1) were obtained for the high al content hemt structure with a 1 nm aln interfacial layer, consistent with the low average sheet resistance of 287 omega/sq. the comparison of hemt wafers with and without aln interfacial layer shows that high al content algan/aln/gan heterostructures are potential in improving the electrical properties of hemt structures and the device performances. (c) 2006 elsevier b.v. all rights reserved. |
WOS关键词 | ALGAN/GAN HETEROSTRUCTURES ; POLARIZATION ; TRANSISTORS ; GANHEMTS ; GAS |
WOS研究方向 | Chemistry ; Materials Science ; Physics |
WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
语种 | 英语 |
出版者 | ELSEVIER SCIENCE BV |
WOS记录号 | WOS:000242647800058 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2426795 |
专题 | 半导体研究所 |
通讯作者 | Wang, Xiaoliang |
作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Cuimei,Wang, Xiaoliang,Hu, Guoxin,et al. Influence of aln interfacial layer on electrical properties of high-al-content al0.45ga0.55n/gan hemt structure[J]. Applied surface science,2006,253(2):762-765. |
APA | Wang, Cuimei,Wang, Xiaoliang,Hu, Guoxin,Wang, Junxi,Li, Jianping,&Wang, Zhanguo.(2006).Influence of aln interfacial layer on electrical properties of high-al-content al0.45ga0.55n/gan hemt structure.Applied surface science,253(2),762-765. |
MLA | Wang, Cuimei,et al."Influence of aln interfacial layer on electrical properties of high-al-content al0.45ga0.55n/gan hemt structure".Applied surface science 253.2(2006):762-765. |
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