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	Influence of aln interfacial layer on electrical properties of high-al-content al0.45ga0.55n/gan hemt structure
	Wang, Cuimei; Wang, Xiaoliang; Hu, Guoxin; Wang, Junxi; Li, Jianping; Wang, Zhanguo
刊名	Applied surface science
	2006-11-15
卷号	253期号:2页码:762-765
关键词	Algan/aln/gan Two-dimensional electron gas Mocvd
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2006.01.017
通讯作者	Wang, xiaoliang(xlwang@red.semi.ac.cn)
英文摘要	Unintentionally doped high-al-content al0.45ga0.55n/gan high electron mobility transistor (hemt) structures with and without aln interfacial layer were grown by metal-organic chemical vapor deposition (mocvd) on two-inch sapphire substrates. the effects of aln interfacial layer on the electrical properties were investigated. at 300 k, high two-dimensional electron gas (2deg) density of 1.66 x 10(11) cm(-2) and high electron mobility of 1346 cm(2) v-1 s(-1) were obtained for the high al content hemt structure with a 1 nm aln interfacial layer, consistent with the low average sheet resistance of 287 omega/sq. the comparison of hemt wafers with and without aln interfacial layer shows that high al content algan/aln/gan heterostructures are potential in improving the electrical properties of hemt structures and the device performances. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词	ALGAN/GAN HETEROSTRUCTURES ; POLARIZATION ; TRANSISTORS ; GANHEMTS ; GAS
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000242647800058
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426795
专题	半导体研究所
通讯作者	Wang, Xiaoliang
作者单位	Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang, Cuimei,Wang, Xiaoliang,Hu, Guoxin,et al. Influence of aln interfacial layer on electrical properties of high-al-content al0.45ga0.55n/gan hemt structure[J]. Applied surface science,2006,253(2):762-765.
APA	Wang, Cuimei,Wang, Xiaoliang,Hu, Guoxin,Wang, Junxi,Li, Jianping,&Wang, Zhanguo.(2006).Influence of aln interfacial layer on electrical properties of high-al-content al0.45ga0.55n/gan hemt structure.Applied surface science,253(2),762-765.
MLA	Wang, Cuimei,et al."Influence of aln interfacial layer on electrical properties of high-al-content al0.45ga0.55n/gan hemt structure".Applied surface science 253.2(2006):762-765.

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