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	Interfaces in heterostructures of alingan/gan/al2o3
	Zhou, SQ; Wu, MF; Yao, SD; Liu, JP; Yang, H
刊名	Superlattices and microstructures
	2006-05-01
卷号	39期号:5页码:429-435
关键词	Nitride semiconductors Interface Rutherford backscattering/channeling Transmission electron microscopy X-ray diffraction
ISSN号	0749-6036
DOI	10.1016/j.spmi.2005.10.003
通讯作者	Zhou, sq(s.zhou@rossendorf.de)
英文摘要	Rutherford backscattering/channeling (rbs/c) and x-ray diffraction (xrd) are used to comprehensively characterize a heterostructure of alingan/gan/al2o3(0001). the alingan quaternary layer was revealed to process a high crystalline quality with a minimum yield of 1.4% from rbs/c measurements. the channeling spectrum of (1 (2) under bar 13) exhibits higher dechanneling than that of (0001) at the interface of alingan/gan. xrd measurements prove a coherent growth of alingan on the gan template layer. combining rbs/c and xrd measurements, we found that the interface of gan/al2o3 is a nucleation layer, composed of a large amount of disorders and cubic gan slabs, while the interface of alingan/gan is free of extra disordering (i.e. compare with the gan layer). the conclusion is further evidenced by transmission electron microscopy (tem). (c) 2005 elsevier ltd. all rights reserved.
WOS关键词	SUPER-LATTICES ; STRAIN ; GAN
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD
WOS记录号	WOS:000237914100005
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426741
专题	半导体研究所
通讯作者	Zhou, SQ
作者单位	1.Peking Univ, Sch Phys, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhou, SQ,Wu, MF,Yao, SD,et al. Interfaces in heterostructures of alingan/gan/al2o3[J]. Superlattices and microstructures,2006,39(5):429-435.
APA	Zhou, SQ,Wu, MF,Yao, SD,Liu, JP,&Yang, H.(2006).Interfaces in heterostructures of alingan/gan/al2o3.Superlattices and microstructures,39(5),429-435.
MLA	Zhou, SQ,et al."Interfaces in heterostructures of alingan/gan/al2o3".Superlattices and microstructures 39.5(2006):429-435.

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