QQ客服 官方微博 反馈留言

	Biaxial stress dependence of the electrostimulated near-band-gap spectrum of gan epitaxial film grown on (0001) sapphire substrate
	Wan, Keshu; Porporati, Alessandro Alan; Feng, Gan; Yang, Hui; Pezzotti, Giuseppe
刊名	Applied physics letters
	2006-06-19
卷号	88期号:25页码:3
ISSN号	0003-6951
DOI	10.1063/1.2214158
通讯作者	Wan, keshu()
英文摘要	The biaxial piezospectroscopic coefficient (i.e., the rate of spectral shift with stress) of the electrostimulated near-band-gap luminescence of gallium nitride (gan) was determined as pi=-25.8 +/- 0.2 mev/gpa. a controlled biaxial stress field was applied on a hexagonal gan film, epitaxially grown on (0001) sapphire using a ball-on-ring biaxial bending jig, and the spectral shift of the electrostimulated near-band-gap was measured in situ in the scanning electron microscope. this calibration method can be useful to overcome the lack of a bulk crystal of relatively large size for more conventional uniaxial bending calibrations, which has so far hampered the precise determination of the piezospectroscopic coefficient of gan. the main source of error involved with the present calibration method is represented by the selection of appropriate values for the elastic stiffness constants of both film and substrate. the ball-on-ring calibration method can be generally applied to directly determine the biaxial-stress dependence of selected cathodoluminescence bands of epilayer/substrate materials without requiring separation of the film from the substrate. (c) 2006 american institute of physics.
WOS关键词	NITRIDE
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000238487800032
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426733
专题	半导体研究所
通讯作者	Wan, Keshu
作者单位	1.Kyoto Inst Technol, Ceram Phys Lab, Sakyo Ku, Kyoto 6068585, Japan 2.Kyoto Inst Technol, Res Inst Nanosci, Sakyo Ku, Kyoto 6068585, Japan 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wan, Keshu,Porporati, Alessandro Alan,Feng, Gan,et al. Biaxial stress dependence of the electrostimulated near-band-gap spectrum of gan epitaxial film grown on (0001) sapphire substrate[J]. Applied physics letters,2006,88(25):3.
APA	Wan, Keshu,Porporati, Alessandro Alan,Feng, Gan,Yang, Hui,&Pezzotti, Giuseppe.(2006).Biaxial stress dependence of the electrostimulated near-band-gap spectrum of gan epitaxial film grown on (0001) sapphire substrate.Applied physics letters,88(25),3.
MLA	Wan, Keshu,et al."Biaxial stress dependence of the electrostimulated near-band-gap spectrum of gan epitaxial film grown on (0001) sapphire substrate".Applied physics letters 88.25(2006):3.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。