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	Structural and optical properties of zno films on si substrates using a gamma-al2o3 buffer layer
	Shen, WJ; Wang, J; Wang, QY; Duan, Y; Zeng, YP
刊名	Journal of physics d-applied physics
	2006-01-21
卷号	39期号:2页码:269-273
ISSN号	0022-3727
DOI	10.1088/0022-3727/39/2/006
通讯作者	Shen, wj(wjshen@semi.ac.cn)
英文摘要	High quality zno films have been successfully grown on a si (100) substrate by metal organic chemical vapour deposition with a gamma-al2o3 buffer. the crystal structure, surface morphology and optical properties of the zno films were characterized by x-ray diffraction, raman spectroscopy, atomic force microscopy and photoluminescence (pl) spectroscopy. the propel-ties of the films with the al2o3 buffer were improved in comparison with those of as-grown zno films. it is shown that the zno films with the gamma-al2o3 buffer grown on si (100) substrates have a highly-preferential c-axis (0002) orientation, a narrow (0002) peak, smooth surface morphology and better pl spectral properties. this demonstrates that the use of gamma-al2o3/si as a zno substrate is beneficial for reducing the residual stress for further growth of zno films, compared with the growth on bulk si substrates.
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; ZINC-OXIDE FILMS ; MOLECULAR-BEAM EPITAXY ; SAPPHIRE ; GROWTH
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000235327200007
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426729
专题	半导体研究所
通讯作者	Shen, WJ
作者单位	Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Shen, WJ,Wang, J,Wang, QY,et al. Structural and optical properties of zno films on si substrates using a gamma-al2o3 buffer layer[J]. Journal of physics d-applied physics,2006,39(2):269-273.
APA	Shen, WJ,Wang, J,Wang, QY,Duan, Y,&Zeng, YP.(2006).Structural and optical properties of zno films on si substrates using a gamma-al2o3 buffer layer.Journal of physics d-applied physics,39(2),269-273.
MLA	Shen, WJ,et al."Structural and optical properties of zno films on si substrates using a gamma-al2o3 buffer layer".Journal of physics d-applied physics 39.2(2006):269-273.

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