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	Strong in-plane optical anisotropy of asymmetric (001) quantum wells
	Chen, YH; Ye, XL; Xu, B; Wang, ZG
刊名	Journal of applied physics
	2006-05-01
卷号	99期号:9页码:3
ISSN号	0021-8979
DOI	10.1063/1.2192150
通讯作者	Chen, yh(yhchen@red.semi.ac.cn)
英文摘要	It is well known that asymmetry in the (001) direction can induce in-plane optical anisotropy (ipoa) in (001) quantum wells (qws). in this letter, asymmetry is introduced in (001) gaas/algaas qws by inserting 1 ml (monolayer) of inas or alas at interfaces. strong ipoa, which is comparable to that in the ingaas/inp qws with no common atom, is observed in the asymmetric gaas/algaas qw by reflectance difference spectroscopy. (c) 2006 american institute of physics.
WOS关键词	HETEROSTRUCTURES ; SPECTROSCOPY ; INTERFACES
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000237682900100
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426705
专题	半导体研究所
通讯作者	Chen, YH
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Chen, YH,Ye, XL,Xu, B,et al. Strong in-plane optical anisotropy of asymmetric (001) quantum wells[J]. Journal of applied physics,2006,99(9):3.
APA	Chen, YH,Ye, XL,Xu, B,&Wang, ZG.(2006).Strong in-plane optical anisotropy of asymmetric (001) quantum wells.Journal of applied physics,99(9),3.
MLA	Chen, YH,et al."Strong in-plane optical anisotropy of asymmetric (001) quantum wells".Journal of applied physics 99.9(2006):3.

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