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	Probing deep level centers in gan epilayers with variable-frequency capacitance-voltage characteristics of au/gan schottky contacts
	Wang, R. X.; Xu, S. J.; Shi, S. L.; Beling, C. D.; Fung, S.; Zhao, D. G.; Yang, H.; Tao, X. M.
刊名	Applied physics letters
	2006-10-02
卷号	89期号:14页码:3
ISSN号	0003-6951
DOI	10.1063/1.2358207
通讯作者	Wang, r. x.()
英文摘要	Under identical preparation conditions, au/gan schottky contacts were prepared on two kinds of gan epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. current-voltage (i-v) and variable-frequency capacitance-voltage (c-v) characteristics show that the schottky contacts on the gan epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias i-v and c-v characteristics. this is attributed to the presence of deep level centers. theoretical simulation of the low-frequency c-v curves leads to a determination of the density and energy level position of the deep centers. (c) 2006 american institute of physics.
WOS关键词	DISLOCATIONS ; DEGRADATION
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000241056900117
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426651
专题	半导体研究所
通讯作者	Wang, R. X.
作者单位	1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State key Lab Integrated Optoelect, Beijing 100083, Peoples R China 3.Hong Kong Polytech Univ, Inst Text & Clothing, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Wang, R. X.,Xu, S. J.,Shi, S. L.,et al. Probing deep level centers in gan epilayers with variable-frequency capacitance-voltage characteristics of au/gan schottky contacts[J]. Applied physics letters,2006,89(14):3.
APA	Wang, R. X..,Xu, S. J..,Shi, S. L..,Beling, C. D..,Fung, S..,...&Tao, X. M..(2006).Probing deep level centers in gan epilayers with variable-frequency capacitance-voltage characteristics of au/gan schottky contacts.Applied physics letters,89(14),3.
MLA	Wang, R. X.,et al."Probing deep level centers in gan epilayers with variable-frequency capacitance-voltage characteristics of au/gan schottky contacts".Applied physics letters 89.14(2006):3.

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